Strategy to enhance the performance of spin field effect transistors-insert effective intermediate layer graphene

Abstract

Novel spin field effect transistors (FETs) with metal contacts are designed to reduce the high Schottky barrier height (SBH) due to Fermi pinning, reducing energy consumption and increasing their performance. Herein, we effectively enhance the conductivity (10⁶ orders of magnitude) and current threshold of the FETs by introducing interlayer graphene in the contact interface between the semiconductor blue phosphorus and the metal, thereby reducing the interlayer resistance. Electronic structure analysis shows that Blue Phosphorus–Graphene–Cu modulates the lowest SBH, yielding a larger FETs conductance compared to other metal systems. The spin injection further enhances the efficiency of FETs as rectifiers (enhanced 13%). This theoretical work provides rational guidance for realizing innovations in next-generation high-performance transistor technology, demonstrating the inherent potential of the regulatory mechanism.