Ferroelastic twin walls for neuromorphic device applications

Abstract

The possibility to use ferroelastic materials as components of neuromorphic devices is discussed. They can be used as local memristors with the advantage that ionic transport is constraint to twin boundaries where ionic diffusion is much faster than in the bulk and does not leak into adjacent domains. It is shown that nano-scale ferroelastic memristors can contain a multitude of domain walls. These domain walls interact by strain fields where the interactions near surfaces are fundamentally different from bulk materials. We show that surface relaxations (∼image forces) are curtailed to short range dipolar interactions which decay as 1/d2 where d is the distance between domain walls. In bigger samples such interactions are long ranging with 1/d. The cross-over regime is typically in the range of some 200–1500 nm using a simple spring interaction model.