{"title":"The Electronic Properties and Friction Characteristics of GeSe/SnS Heterostructures Based on the DFT Theoretical Calculations","authors":"Xing’an Cao, Peipei Xu, Xiushuo Zhang, Haixiang Huan, Linzhen Zhou, Chunwei Zhang","doi":"10.1007/s11249-024-01913-w","DOIUrl":null,"url":null,"abstract":"<div><p>Constructing van der Waals (vdW) heterostructures offers a feasible approach for enhancing the electronic properties and obtaining superlubricity of various electromechanical devices. Here, the electronic and frictional properties of GeSe/SnS heterostructures were investigated through first-principle calculations based on density function theory. The GeSe/SnS bilayer with AC stacking configuration revealed a direct band structure with a gap value of about 0.95 eV and a standard typical type-II band alignment. Within the GeSe/SnS vdW heterostructure, AC stacking setup demonstrates a more uniform potential energy surface (PES) than AB stacking arrangement, verified by a lower friction barrier. The peak PES value of the GeSe/SnS heterostructure in AC stacking is merely 0.0016 eV. The weak vdW interaction between the adjacent layers in vdW heterostructure and smooth PES are responsible for reducing potential energy fluctuations and friction. The investigation on the friction characteristics of GeSe/SnS vdW heterostructure with AC stacking configuration provides valuable insights for understanding the atomic-scale friction behavior in two-dimensional (2D) materials.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":806,"journal":{"name":"Tribology Letters","volume":"72 4","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tribology Letters","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11249-024-01913-w","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Constructing van der Waals (vdW) heterostructures offers a feasible approach for enhancing the electronic properties and obtaining superlubricity of various electromechanical devices. Here, the electronic and frictional properties of GeSe/SnS heterostructures were investigated through first-principle calculations based on density function theory. The GeSe/SnS bilayer with AC stacking configuration revealed a direct band structure with a gap value of about 0.95 eV and a standard typical type-II band alignment. Within the GeSe/SnS vdW heterostructure, AC stacking setup demonstrates a more uniform potential energy surface (PES) than AB stacking arrangement, verified by a lower friction barrier. The peak PES value of the GeSe/SnS heterostructure in AC stacking is merely 0.0016 eV. The weak vdW interaction between the adjacent layers in vdW heterostructure and smooth PES are responsible for reducing potential energy fluctuations and friction. The investigation on the friction characteristics of GeSe/SnS vdW heterostructure with AC stacking configuration provides valuable insights for understanding the atomic-scale friction behavior in two-dimensional (2D) materials.
期刊介绍:
Tribology Letters is devoted to the development of the science of tribology and its applications, particularly focusing on publishing high-quality papers at the forefront of tribological science and that address the fundamentals of friction, lubrication, wear, or adhesion. The journal facilitates communication and exchange of seminal ideas among thousands of practitioners who are engaged worldwide in the pursuit of tribology-based science and technology.