Influence of Impurities on Defect Formation and Oxygen Diffusion in TiN

IF 0.4 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
A. V. Bakulin, S. E. Kulkova
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引用次数: 0

Abstract

The effect of substitutional impurities on the formation energy of nitrogen vacancies and the oxygen defect on the N-sublattice as well as on the oxygen migration energy in TiN is studied using the projector augmented wave method. It has been shown that 4d transition metals with the exception of Zr and elements of IIIA and IVA groups excluding Al and Si reduce the formation energy of nitrogen vacancies. At the same time, regardless of the impurity, the formation energy of the oxygen defect has a negative value. The oxygen migration energy within the first coordination sphere is increased by almost all impurities, while metals of the middle of the 4dperiod slightly lower the migration barrier of oxygen, which allows it to move away from the impurity atom. The lower and upper limits of the temperature-dependent diffusion coefficient of oxygen in the doped titanium nitride are estimated. It has been revealed that almost all considered impurities reduce the diffusion coefficient mainly due to a change in the migration energy.

杂质对 TiN 中缺陷形成和氧扩散的影响
使用投影增强波方法研究了替代杂质对氮空位和 N 亚晶格上氧缺陷的形成能以及对 TiN 中氧迁移能的影响。结果表明,4d 过渡金属(Zr 除外)以及 IIIA 和 IVA 族元素(Al 和 Si 除外)会降低氮空位的形成能。同时,无论杂质是什么,氧缺陷的形成能都是负值。几乎所有杂质都会增加氧在第一配位层内的迁移能,而 4dperiod 中部的金属会略微降低氧的迁移障碍,使其远离杂质原子。我们估算了氧在掺杂氮化钛中随温度变化的扩散系数的下限和上限。结果表明,几乎所有考虑到的杂质都会降低扩散系数,这主要是由于迁移能的变化。
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来源期刊
Russian Physics Journal
Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.00
自引率
50.00%
发文量
208
审稿时长
3-6 weeks
期刊介绍: Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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