Pressure-Enhanced Superconductivity and Structural Phase Transition in Layered Sn4P3

Small Structures Pub Date : 2024-09-09 DOI:10.1002/sstr.202400381

Hao Ding, Jingyu Hou, Kun Zhai, Xin Gao, Junquan Huang, Feng Ke, Bingchao Yang, Congpu Mu, Fusheng Wen, Jianyong Xiang, Bochong Wang, Tianyu Xue, Anmin Nie, Xiaobing Liu, Lin Wang, Xiang-Feng Zhou, Zhongyuan Liu

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Abstract

High pressure provides a unique tuning method depending on structure modulation to explore the structure–property relationship. Herein, the pressure-induced structural phase transformation and enhanced superconductivity in a layered binary phosphide Sn₄P₃ are reported. Comprehensive measurements using in situ synchrotron X-Ray diffraction and Raman spectroscopy reveal a structural phase transition with mild distortion of SnP₃ building blocks and interlayer shrinkage under high pressure. This differs from a conventional trigonal SnAs(P)₃ to square SnAs(P)₄ topotactic transition in SnAs(P)-based compound. Through this structure reconstruction under high pressure, electron distribution has been reorganized and phonons have softened, facilitating a high superconducting temperature (T_c) value of 7.8 K at 34.9 GPa, which is almost six times higher than its ambient value. The study introduces a new transition route in layered SnAs/SnP-based intermetallic materials and provides insight into the structural and electronic changes under high pressure for Sn₄P₃.

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层状 Sn4P3 的压力增强超导性和结构相变

高压为探索结构与性能的关系提供了一种取决于结构调制的独特调节方法。本文报告了层状二元磷化物 Sn4P3 在压力诱导下发生的结构相变和增强的超导性。利用原位同步加速器 X 射线衍射和拉曼光谱进行的综合测量显示，在高压下，SnP3 结构单元发生了轻度变形和层间收缩，从而出现了结构相变。这不同于传统 SnAs（P）基化合物中从三方 SnAs（P）3 到四方 SnAs（P）4 的拓扑转变。通过高压下的这种结构重构，电子分布发生了重组，声子软化，从而使超导温度（Tc）在 34.9 GPa 时达到 7.8 K 的高值，比其环境值高出近六倍。这项研究为基于层状 SnAs/SnP 的金属间材料引入了一条新的过渡路线，并为深入了解 Sn4P3 在高压下的结构和电子变化提供了线索。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Small Structures

CiteScore

17.30

自引率

0.00%

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