Improvement of thermal stability and luminescence in La3ZrxSn1−xGa5O14:0.015Cr3+ by the substitution of Zr # Sn and its application in level detection, biomedical imaging and night vision monitoring†
Xiaoshuai Zhang, Chengrun Liu, Xiaoyan Yu, Zixuan Wang, Panlai Li, Yawei Shi and Zhijun Wang
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引用次数: 0
Abstract
Although there has been a considerable amount of research on near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs), narrow-band emission and poor thermal stability continue to be problems associated with NIR phosphors. To solve these problems, La3ZrxSn1−xGa5O14:0.015Cr3+ phosphors with ultra-broadband NIR emission were obtained by partially replacing Sn4+ with Zr4+ through a strategy of multiple lattice site occupancy and cationic modulation, which altered the crystal field environment of the material. The spectrum was broadened, and the luminous intensity and thermal stability of the material were successfully improved. Finally, the phosphor was combined with a blue LED chip package, and the broad prospects of the phosphor in the NIR application field were proved by experiments of level detection, biomedical imaging, and night vision monitoring.
通过取代 Zr # Sn 提高 La3ZrxSn1-xGa5O14:0.015Cr3+ 的热稳定性和发光性能及其在物位探测、生物医学成像和夜视监测中的应用
目前,近红外荧光粉转换发光二极管(pc-LED)逐渐成为研究热点,但近红外荧光粉仍然存在发射波段窄、热稳定性差等问题。为了解决上述问题,研究人员通过多晶格位点占据和阳离子调制策略,改变材料的晶场环境,用Zr4+部分取代Sn4+,得到了具有超宽带近红外(NIR)发射的La3ZrxSn1-xGa5O14:0.015Cr3+荧光粉。成功地拓宽了光谱,提高了发光强度和热稳定性。最后,该荧光粉与蓝光 LED 芯片封装相结合,通过物位检测、生物医学成像和夜视监测等实验,证明了该荧光粉在近红外应用领域的广阔前景。