Monte Carlo calculations of cryogenic photodetector readout of scintillating GaAs for dark matter detection

Stephen E. Derenzo
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Abstract

The recent discovery that GaAs(Si,B) is a bright cryogenic scintillator with no apparent afterglow offers new opportunities for detecting rare, low-energy, electronic excitations from interacting dark matter. This paper presents Monte Carlo calculations of the scintillation photon detection efficiencies of optical cavities using three current cryogenic photodetector technologies. In order of photon detection efficiency these are: (1) Ge/TES: germanium absorbers that convert interacting photons to athermal phonons that are readout by transition edge sensors, (2) KID: kinetic induction detectors that respond to the breaking of cooper pairs by a change in resonance frequency, and (3) SNSPD: superconducting nanowire single photon detectors, where a photon briefly transitions a thin wire from superconducting to normal. The detection efficiencies depend strongly on the n-type GaAs absolute absorption coefficient KA, which is a part of the narrow beam absorption that has never been directly measured. However, the high cryogenic scintillation luminosity of GaAs(Si,B) sets an upper limit on KA of 0.03/cm. Using that value and properties published for Ge/TES, KID, and SNSPD photodetectors, this work calculates that those photodetectors attached to opposing faces of a 1 cm3 cubic GaAs(Si,B) crystal in an optical cavity with gold mirrors would have scintillation photon detection efficiencies of 35%, 25%, and 8%, respectively. Larger values would be expected for lower values of KA.
用于暗物质探测的闪烁砷化镓低温光电探测器读出的蒙特卡洛计算
最近发现砷化镓(Si,B)是一种没有明显余辉的明亮低温闪烁体,这为探测来自相互作用暗物质的罕见低能电子激发提供了新的机会。本文介绍了利用目前三种低温光电探测器技术对光腔的闪烁光子探测效率进行的蒙特卡洛计算。按照光子探测效率排序,它们是(1) Ge/TES:锗吸收器,可将相互作用的光子转化为热声子,由过渡边缘传感器读出;(2) KID:动能感应探测器,可通过共振频率的变化对合作对的断裂做出反应;以及 (3)SNSPD:超导纳米线单光子探测器,光子可使细线从超导状态短暂过渡到正常状态。探测效率在很大程度上取决于 n 型砷化镓的绝对吸收系数 KA,这是窄束吸收的一部分,从未被直接测量过。不过,GaAs(Si,B)的高低温闪烁光度为 KA 设定了 0.03/cm 的上限。利用该值和已公布的 Ge/TES、KID 和 SNSPD 光电探测器的特性,本研究计算出,将这些光电探测器安装在带金镜的光腔中 1 立方厘米 GaAs(Si,B)晶体的相对面上,其闪烁光电探测效率分别为 35%、25% 和 8%。当 KA 值较低时,其值会更大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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