Optical properties and structural rigidity of [(GeSe2)75(Sb2Se3)25]100−xTex chalcogenide glasses for potential applications in infrared filters and lenses
IF 2.8 4区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Reetu Chauhan, Yasser A. M. Ismail, K. A. Aly, Pankaj Sharma, Ram Chhavi Sharma, Chetna Tyagi, Sunanda Sharda
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引用次数: 0
Abstract
Chalcogenide glasses are promising candidates for advanced optical applications due to their tunable optical properties and structural stability. This paper presents the theoretical and optical investigations of the [(GeSe2)75(Sb2Se3)25]100−xTex (x = 0, 2.5, 5, 7.5, 10) chalcogenide glass system. Bulk samples have been fabricated using the classic melt quenching technique, followed by thermal evaporation to deposit thin films on glass substrates. Optical parameters, including the absorption coefficient, optical bandgap, and Urbach energy, have been estimated using absorbance spectra. A blue shift in the absorption edge has been observed, resulting in decreased optical bandgap values. A blue shift in the absorption edge has been observed, resulting in decreased optical bandgap values, while the refractive index increased with Te addition, attributed to increased material density. The mean coordination number values exceeded 2.4, indicating a rigid glassy structure. Additionally, the system demonstrated enhanced infrared transmission with a red shift in the absorbance spectra. The increased optical density and packing density with Te doping suggest potential optical applications, i.e., in infrared filters and lenses.
卤化物玻璃具有可调的光学特性和结构稳定性,是先进光学应用的理想候选材料。本文介绍了对[(GeSe2)75(Sb2Se3)25]100-xTex(x = 0、2.5、5、7.5、10)卤化物玻璃体系的理论和光学研究。利用经典的熔体淬火技术制作了块状样品,然后通过热蒸发将薄膜沉积在玻璃基底上。光学参数,包括吸收系数、光学带隙和厄巴赫能,都是通过吸光度光谱估算出来的。观察到吸收边缘发生了蓝移,导致光带隙值减小。吸收边缘出现蓝移,导致光带隙值降低,而折射率随着 Te 的添加而增加,这归因于材料密度的增加。平均配位数值超过了 2.4,表明其具有刚性玻璃结构。此外,该体系的红外透射率也得到了增强,吸光度光谱发生了红移。掺杂 Te 后光密度和堆积密度的增加表明,这种材料具有潜在的光学应用价值,例如,可用于红外滤光片和透镜。
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.