{"title":"Structural and energy storage properties of LiTa0.97Nb0.03O3 modulated (Ba0.5Na0.5)0.7Ba0.3TiO3-based ceramics","authors":"Chen Chen, Qiyi Yin, Fei Lin, Zhongrui Du, Fan Si, Yulin Zhang, Mengjun Zhang, Xiangyu Zhu, Hui Zhang, Hao Zu, Kunhong Hu, Fulin Zhang, Zhifeng Li, Hongqian Guo","doi":"10.1007/s10854-024-13456-w","DOIUrl":null,"url":null,"abstract":"<div><p>Lead-free dielectric energy storage ceramics have attracted much attention in the fields of medicine, electronic components and military because of their ultra-high efficiency and high energy storage density. In this study, (1-<i>x</i>)(Bi<sub>0.5</sub>Na<sub>0.5</sub>)<sub>0.7</sub>Ba<sub>0.3</sub>TiO<sub>3</sub>-<i>x</i>LiTa<sub>0.97</sub>Nb<sub>0.03</sub>O<sub>3</sub> (BNBT-<i>x</i>LTN) lead-free relaxation energy storage ceramics have been prepared by solid-phase high-temperature sintering.XRD analysis confirms that all the components of BNBT-<i>x</i>LTN ceramics are in a single-phase chalcocite structure, and no heterogeneous phases are detected. With the increase of LTN doping, the relaxation and energy storage properties of the ceramics were significantly improved, while the microscopic morphology showed a dense state with uniform particle size and no pores, which improved the breakdown strength (<i>E</i><sub>b</sub>) of the ceramics. Analysis of the experimental results 0p showed that the LTN-doped ceramics displayed finer electric hysteresis return lines (<i>P-E</i>) as compared to the undoped BNBT (<i>x</i> = 0).The electrical performance of the ceramics is significantly enhanced at 30 kV/mm field strength when LTN doping <i>x</i> = 0.10. Its recoverable energy storage density is as high as <i>W</i><sub>rec</sub> = 4.95 J/cm<sup>3</sup> and <i>η</i> = 93.2% with ultra-high energy storage efficiency. The ceramic also has an ultra-short discharge time of <i>t</i><sub>0.9</sub> = 0.38 μs. This study demonstrates the great potential of this ceramic system for practical applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13456-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Lead-free dielectric energy storage ceramics have attracted much attention in the fields of medicine, electronic components and military because of their ultra-high efficiency and high energy storage density. In this study, (1-x)(Bi0.5Na0.5)0.7Ba0.3TiO3-xLiTa0.97Nb0.03O3 (BNBT-xLTN) lead-free relaxation energy storage ceramics have been prepared by solid-phase high-temperature sintering.XRD analysis confirms that all the components of BNBT-xLTN ceramics are in a single-phase chalcocite structure, and no heterogeneous phases are detected. With the increase of LTN doping, the relaxation and energy storage properties of the ceramics were significantly improved, while the microscopic morphology showed a dense state with uniform particle size and no pores, which improved the breakdown strength (Eb) of the ceramics. Analysis of the experimental results 0p showed that the LTN-doped ceramics displayed finer electric hysteresis return lines (P-E) as compared to the undoped BNBT (x = 0).The electrical performance of the ceramics is significantly enhanced at 30 kV/mm field strength when LTN doping x = 0.10. Its recoverable energy storage density is as high as Wrec = 4.95 J/cm3 and η = 93.2% with ultra-high energy storage efficiency. The ceramic also has an ultra-short discharge time of t0.9 = 0.38 μs. This study demonstrates the great potential of this ceramic system for practical applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.