Eco-friendly water-induced lithium oxide/polyethyleneimine ethoxylated as a possible gate dielectric of the organic field effect transistor

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ali Bahari
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Abstract

It seems impossible to use silicon oxide as a suitable gate dielectric material in metal-oxide-semiconductor field effect transistors. Many researchers have studied various metal oxides, nitrides, composite, and hybrid materials in search of dielectric materials that can replace silicon oxide. Each of these materials has advantages and disadvantages. In the present work, water-induced Lithium oxide (LiOx) with the organic PEIE (polyethylene imine ethoxylated) materials has been synthesized and studied. One advantage of the present work is using deionized water for getting (LiOx) precursor solution from lithium nitrate without the use of any toxic additives, resulting in a low cost-effective and eco-friendly synthesis. By fabricating three organic field effect transistors (OFETs) with LiOx/ PEIE nanocomposite materials with the same weight ratio (1:1), desirable electrical characteristics such as higher carrier mobility (μ) of 47.3 cm2V−1 S−1 , higher on-off current ratio (Ion/Ioff) of ∼105 , minima threshold voltage (Vth) shift of ∼ 0.6 (±0.2) V, lower subthreshold swing (SS) of 3.12 mV/decade and lower tunneling-, and leakage current density (J) of 2 (nA/cm2) could be found which demonstrated eco-friendly water-induced LiOx/ PEIE can be used as an alternative gate dielectric for the future of the OFET devices.

Abstract Image

环保型水诱导氧化锂/聚乙烯亚胺乙氧基化物可作为有机场效应晶体管的栅极电介质
在金属氧化物半导体场效应晶体管中,似乎不可能使用氧化硅作为合适的栅极介电材料。许多研究人员对各种金属氧化物、氮化物、复合材料和混合材料进行了研究,以寻找可以替代氧化硅的介电材料。这些材料各有利弊。在本研究中,我们合成并研究了水诱导氧化锂(LiOx)与有机 PEIE(聚乙烯亚胺乙氧基化)材料。本研究的一个优点是使用去离子水从硝酸锂中提取(LiOx)前体溶液,不使用任何有毒添加剂,从而实现了低成本、环保的合成。通过用相同重量比(1:1)的 LiOx/ PEIE 纳米复合材料制造三个有机场效应晶体管(OFET),获得了理想的电气特性,如更高的载流子迁移率(μ)47.3 cm2V-1 S-1、更高的通断电流比(Ion/Ioff)∼105、最小阈值电压(Vth)偏移∼ 0.6 (±0.2) V、更低的阈下摆动 (SS) 3.12 mV/decade、更低的隧穿和漏电流密度 (J) 2 (nA/cm2),这表明环保的水诱导锂氧化物/ PEIE 可用作未来 OFET 器件的替代栅极电介质。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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