Dielectric properties and impedance spectroscopic study of (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Qin Gao, Nianshun Zhao, Jiale Wu, Qi Yu, Li Wang, Juan Hu, Sha Lu, Xiaofan Zheng
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引用次数: 0

Abstract

The solid-state reaction method was employed to synthesize (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3, denoted as (1−x)(NN–BMT)–xBNSLTZ (xBNSLTZ). XRD analysis of xBNSLTZ confirmed that all samples possessed a pure perovskite structure. SEM micrographs demonstrated homogeneous grain distribution and minimal porosity. With an increasing concentration of BNSLTZ, there was a gradual reduction in average grain size. Impedance spectroscopy was utilized to investigate the electrical properties of xBNSLTZ across a frequency sweep of 10 Hz–1 MHz and over a temperature range of 420–560 °C. The complex impedance and modulus spectra reveal non-Debye-type dielectric relaxation, indicative of two contributing mechanisms: grain and grain boundary effects on conduction. Electric modulus analysis indicated that the low-frequency relaxation process was temperature independent. The dc conductivity variation with temperature follows the Arrhenius equation. The ac conductivity was found to adhere to Jonscher power law. The Ea (the relaxation activation energy) and Ec (conductance activation energy) confirmed the relaxation mechanism of 0.3BNSLTZ is dipolar conduction. The dielectric properties showed a significant dependence on both frequency and temperature. A dielectric anomaly pointed to the presence of a single relaxation behavior. It was observed that an increase in BNSLTZ concentration led to a decrease in the maximum dielectric constant. Optimum performance was obtained with the 0.3BNSLTZ ceramics, which has the smallest average grain size (1.54 μm), considerable resistance value (R ~ 1000 K \({\Omega }cm\)), and moderate dielectric constant (εr ~ 600), superior to the pure NN-BMT ceramic. These results demonstrate that the electrical property of the xBNSLTZ ceramics have some potential value in the application of electrical materials.

Abstract Image

(1-x)[0.90NaNbO3-0.10Bi(Mg0.5Ta0.5)O3]-x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 陶瓷的介电性能和阻抗谱研究
采用固态反应法合成了(1-x)[0.90NaNbO3-0.10Bi(Mg0.5Ta0.5)O3]-x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3,命名为(1-x)(NN-BMT)-xBNSLTZ(xBNSLTZ)。xBNSLTZ 的 XRD 分析表明,所有样品都具有纯净的包晶结构。扫描电镜显微照片显示出均匀的晶粒分布和最小的孔隙率。随着 BNSLTZ 浓度的增加,平均晶粒尺寸逐渐减小。阻抗光谱法用于研究 xBNSLTZ 在 10 Hz-1 MHz 频率扫描和 420-560 °C 温度范围内的电学特性。复阻抗和模量光谱显示了非戴贝型介电弛豫,表明了两种促成机制:晶粒和晶界对传导的影响。电模量分析表明,低频弛豫过程与温度无关。直流导电率随温度的变化遵循阿伦尼乌斯方程。发现交流电导率遵循容舍幂律。Ea(弛豫活化能)和 Ec(电导活化能)证实了 0.3BNSLTZ 的弛豫机制是双极传导。介电特性显示出与频率和温度的显著相关性。介电异常表明存在单一的弛豫行为。据观察,BNSLTZ 浓度的增加会导致最大介电常数的下降。0.3BNSLTZ 陶瓷获得了最佳性能,它具有最小的平均晶粒尺寸(1.54 μm)、相当大的电阻值(R ~ 1000 K ({\Omega }cm\))和适中的介电常数(εr ~ 600),优于纯 NN-BMT 陶瓷。这些结果表明,xBNSLTZ 陶瓷的电学特性在电学材料的应用中具有一定的潜在价值。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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