Muhammad Zakir Muzakkar, Nur Aisyah Busri, Akrajas Ali Umar, La Ode Agus Salim, Maulidiyah Maulidiyah, Muhammad Nurdin
{"title":"Enhanced Performance of Perovskite Solar Cells with Tungsten-Doped SnO2 as an Electron Transport Material","authors":"Muhammad Zakir Muzakkar, Nur Aisyah Busri, Akrajas Ali Umar, La Ode Agus Salim, Maulidiyah Maulidiyah, Muhammad Nurdin","doi":"10.1007/s10904-024-03365-0","DOIUrl":null,"url":null,"abstract":"<p>This study focuses on the synthesis and characterization of tungsten (W)-doped SnO<sub>2</sub> as an electron transport material (ETM) for perovskite solar cells (PSC). The aim is to enhance the performance of PSCs by improving the properties of the ETM. The W-doped SnO<sub>2</sub> was synthesized by dissolving SnO<sub>2</sub> and W in deionized water, followed by sonication. The doping was achieved using a spin-coating technique, with subsequent annealing at 350 °C for 20 min. X-ray diffraction analysis revealed characteristic peaks of SnO<sub>2</sub> at 2θ values of 26.53°, 33.82°, 37.67°, 51.59°, and 54.69°, alongside an additional peak at 2θ = 14.46°, indicative of successful tungsten incorporation. Field emission scanning electron microscopy confirmed the formation of a uniform electron transport layer on fluorine-doped tin oxide glass, with a thickness of approximately 44.66 nm. UV–Vis spectroscopy measurements showed that the band gap of W-doped SnO<sub>2</sub> was 4.38 eV. Performance evaluation revealed that the W-doped SnO<sub>2</sub> ETL outperformed the undoped SnO<sub>2</sub> ETL in PSC applications, as evidenced by significant improvements in open-circuit voltage (Voc), fill factor (FF), short-circuit current density (Jsc), and power conversion efficiency. Incorporating W into the SnO<sub>2</sub> ETL led to a marked increase in overall device efficiency, corroborated by a hysteresis curve demonstrating reduced J–V loss. The optimized W-doped SnO<sub>2</sub> ETL-based PSC achieved a notable power conversion efficiency of up to 8.02%, with Voc, Jsc, and FF reaching 0.89 V, 23.65 mA/cm<sup>2</sup>, and 0.45, respectively. This study highlights the significant potential of W-doped SnO<sub>2</sub> as a promising ETM for enhancing the efficiency of PSCs.</p>","PeriodicalId":639,"journal":{"name":"Journal of Inorganic and Organometallic Polymers and Materials","volume":null,"pages":null},"PeriodicalIF":3.9000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Inorganic and Organometallic Polymers and Materials","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1007/s10904-024-03365-0","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}
引用次数: 0
Abstract
This study focuses on the synthesis and characterization of tungsten (W)-doped SnO2 as an electron transport material (ETM) for perovskite solar cells (PSC). The aim is to enhance the performance of PSCs by improving the properties of the ETM. The W-doped SnO2 was synthesized by dissolving SnO2 and W in deionized water, followed by sonication. The doping was achieved using a spin-coating technique, with subsequent annealing at 350 °C for 20 min. X-ray diffraction analysis revealed characteristic peaks of SnO2 at 2θ values of 26.53°, 33.82°, 37.67°, 51.59°, and 54.69°, alongside an additional peak at 2θ = 14.46°, indicative of successful tungsten incorporation. Field emission scanning electron microscopy confirmed the formation of a uniform electron transport layer on fluorine-doped tin oxide glass, with a thickness of approximately 44.66 nm. UV–Vis spectroscopy measurements showed that the band gap of W-doped SnO2 was 4.38 eV. Performance evaluation revealed that the W-doped SnO2 ETL outperformed the undoped SnO2 ETL in PSC applications, as evidenced by significant improvements in open-circuit voltage (Voc), fill factor (FF), short-circuit current density (Jsc), and power conversion efficiency. Incorporating W into the SnO2 ETL led to a marked increase in overall device efficiency, corroborated by a hysteresis curve demonstrating reduced J–V loss. The optimized W-doped SnO2 ETL-based PSC achieved a notable power conversion efficiency of up to 8.02%, with Voc, Jsc, and FF reaching 0.89 V, 23.65 mA/cm2, and 0.45, respectively. This study highlights the significant potential of W-doped SnO2 as a promising ETM for enhancing the efficiency of PSCs.
期刊介绍:
Journal of Inorganic and Organometallic Polymers and Materials [JIOP or JIOPM] is a comprehensive resource for reports on the latest theoretical and experimental research. This bimonthly journal encompasses a broad range of synthetic and natural substances which contain main group, transition, and inner transition elements. The publication includes fully peer-reviewed original papers and shorter communications, as well as topical review papers that address the synthesis, characterization, evaluation, and phenomena of inorganic and organometallic polymers, materials, and supramolecular systems.