Impact of Neodymium substitution on electrical properties in mixed phase of Bismuth containing pyrochlore (Bi2Sn2O7 and Bi2O3–SnO2)

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Asadullah Nadir, Muhammad Khalid, Muhammad Younas, M. G. B. Ashiq, Arshi, Imen Kebaili, Burhanuddin, Hafsa Najam
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引用次数: 0

Abstract

In this paper, Neodymium-doped Bismuth pyrochlore and its hybridized mixed phases (NdxBi2-xSn2O7 and Bi2O3–SnO2) were synthesized using the sol–gel autocombustion method. The synthesized material was annealed at 600 °C for three hours in a muffle furnace to ensure its crystalline structure, and X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis were conducted. Fourier Transform Infrared (FTIR) spectroscopy was employed to predict the phases and absorption frequencies. Subsequent to a comprehensive structural analysis, the dielectric properties, encompassing the real and imaginary components of Impedance, Electric modulus, dielectric constant, and tangent loss, were analyzed. This analysis spanned a frequency range from 1 MHz to 3 GHz, covering different doping concentrations. Notably, the maximum dielectric constant was attained for a doping concentration of x = 1.0 at 2.7 GHz. Conclusively, the obtained dielectric data suggest that the synthesized material holds promise for various applications, including high-frequency electronics, telecommunications, and wireless communication systems.

Abstract Image

钕替代对含铋热长石(Bi2Sn2O7 和 Bi2O3-SnO2)混合相电学特性的影响
本文采用溶胶-凝胶自燃烧法合成了掺钕铋热长石及其杂化混合相(NdxBi2-xSn2O7 和 Bi2O3-SnO2)。合成材料在马弗炉中于 600 °C 下退火三小时,以确保其晶体结构,并进行了 X 射线衍射 (XRD) 和透射电子显微镜 (TEM) 分析。傅立叶变换红外(FTIR)光谱用于预测相位和吸收频率。在进行了全面的结构分析之后,还分析了介电性能,包括阻抗、电模量、介电常数和正切损耗的实部和虚部。分析的频率范围从 1 MHz 到 3 GHz,涵盖了不同的掺杂浓度。值得注意的是,当掺杂浓度为 x = 1.0 时,介电常数在 2.7 GHz 时达到最大。总之,获得的介电数据表明,合成材料有望应用于各种领域,包括高频电子、电信和无线通信系统。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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