{"title":"Growth behavior and kinetics of interfacial IMC for ZnSnCuNiAl/Cu solder joints subjected to isothermal aging","authors":"Wenjing Chen, Xiaowu Hu, Jiancheng Tang","doi":"10.1007/s10854-024-13436-0","DOIUrl":null,"url":null,"abstract":"<div><p>Zn–30Sn–2Cu–0.5Ni–0.2Al (ZnSnCuNiAl) solder joints were isothermally aged in the temperature range of 100–170 °C for up to 360 h, and the growth behavior and kinetics of the intermetallic compound (IMC) formed between the ZnSnCuNiAl solder and Cu substrate during the aging process were investigated. The results showed that the interfacial reaction between the liquid solder and the solid Cu substrate caused the formation of IMC layers, which were composed of a thin irregular scallop-shaped <i>ε</i>-CuZn<sub>5</sub> layer and a thick <i>γ</i>-Cu<sub>5</sub>Zn<sub>8</sub> layer. With the increase in aging temperature and time, the serrated <i>ε</i>-CuZn<sub>5</sub> layer gradually peeled off from the IMC interface and entered the solder due to thermal mismatch induced cracks between <i>ε</i>-CuZn<sub>5</sub> and <i>γ</i>-Cu<sub>5</sub>Zn<sub>8</sub>. The growth of the IMC layer at the solder joint interface was controlled by the bulk diffusion, and its thickness had a linear relationship with the square root of the aging time. Diffusion coefficients and activation energy for the interfacial Cu<sub>5</sub>Zn<sub>8</sub> IMC layer were plotted as a function of aging temperature, and the values were calculated by the Arrhenius equation. The calculated activation energy of the Cu<sub>5</sub>Zn<sub>8</sub> IMC layer was 77.78 kJ/mol, which was higher than that of the similar IMC layer in other lead-free solder joints, indicating a slower growth rate of the IMC layer between the solder and substrate during aging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13436-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Zn–30Sn–2Cu–0.5Ni–0.2Al (ZnSnCuNiAl) solder joints were isothermally aged in the temperature range of 100–170 °C for up to 360 h, and the growth behavior and kinetics of the intermetallic compound (IMC) formed between the ZnSnCuNiAl solder and Cu substrate during the aging process were investigated. The results showed that the interfacial reaction between the liquid solder and the solid Cu substrate caused the formation of IMC layers, which were composed of a thin irregular scallop-shaped ε-CuZn5 layer and a thick γ-Cu5Zn8 layer. With the increase in aging temperature and time, the serrated ε-CuZn5 layer gradually peeled off from the IMC interface and entered the solder due to thermal mismatch induced cracks between ε-CuZn5 and γ-Cu5Zn8. The growth of the IMC layer at the solder joint interface was controlled by the bulk diffusion, and its thickness had a linear relationship with the square root of the aging time. Diffusion coefficients and activation energy for the interfacial Cu5Zn8 IMC layer were plotted as a function of aging temperature, and the values were calculated by the Arrhenius equation. The calculated activation energy of the Cu5Zn8 IMC layer was 77.78 kJ/mol, which was higher than that of the similar IMC layer in other lead-free solder joints, indicating a slower growth rate of the IMC layer between the solder and substrate during aging.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.