M. Ragab, Hind Alsnani, A. E. Hammad, Ashraf S. Abd‑Elrahman
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引用次数: 0
Abstract
The objective of this research is to investigate the role of Sb addition on the microstructure and creep behaviors of the Sn–6.5Zn–0.3Cu solder alloy. Concerning microstructure examinations, the results exhibited that the Sb addition to the Sn–6.5Zn–0.3Cu alloy successfully produced uniform dispersion of γ-Cu5Zn8 and Sb2SnZn intermetallic compounds (IMCs) along with α-Zn and β-Sn matrix, resulting in the microstructure refinement. In addition, because Cu–Zn and Sb–Sn–Zn IMC particles formed, the adverse effects of the oxidation resistance of Zn were reduced. The results showed that the microstructure and creep behaviors of the Sn–6.5Zn–0.3Cu-based alloy improved with Sb addition. Specifically, the creep resistance of the Sn–6.5Zn–0.3Cu alloy was greatly improved by the addition of 3.0 Sb and 1.0 Sb, resulting in enhancements of around 460% and 170%, respectively, due to the solid solution and finely dispersed IMCs. Due to the solid solution’s strengthening and the various dispersed IMCs, the Sb-containing solder alloys also displayed prolonged creep lifetimes and the highest stress exponents. In view of results, the microalloying of Sb in Sn–6.5Zn–0.3Cu-based alloy has produced dependable, high-performance creep properties that satisfy the needs of the industrial applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.