Zn site substituting effects on structural evolution and microwave dielectric properties of rutile Zn0.15Nb0.3Ti0.55O2 ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Juan Gao, Juncheng Ma, Dafang Zhong, Hongyu Yang, Peidong Li, Zhe Xiong, Bin Tang
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Abstract

In this work, the structure–property relationship of four types of divalent ions doped rutile Zn0.15Nb0.3Ti0.55O2 microwave dielectric ceramics, including Co2+, (Cu0.5Co0.5)2+, (Cu0.5Ba0.5)2+, and Ca2+, were studied. It is found that impurity phases with contents less than 1.5% were identified in Ca2+ and (Cu0.5Ba0.5)2+ doped systems. There are decreased trends of axis length and cell volume along with the decrease of radius of doped ions. The extrinsic factors, including amounts of grain boundaries, and uniformity of grain size distribution, contribute to the development of microwave dielectric properties. More importantly, based on the P–V–L bond theory, it is shown that the variations of bond ionicity, lattice energy, and bond energy are responsible for the dielectric constant, quality factor, and temperature coefficient of resonance frequency, where Nb–O bonds own the largest bond ionicity and bond energy among all the types of bonds, and Ti–O bonds provide about 52% of the total lattice energy. This study provides an idea for further improving the microwave dielectric properties of rutile Zn0.15Nb0.3Ti0.55O2 ceramics by moderating the bond characteristics.

Abstract Image

锌位点置换对金红石型 Zn0.15Nb0.3Ti0.55O2 陶瓷结构演化和微波介电性能的影响
本文研究了四种二价离子掺杂金红石型 Zn0.15Nb0.3Ti0.55O2 微波介电陶瓷的结构-性能关系,包括 Co2+、(Cu0.5Co0.5)2+、(Cu0.5Ba0.5)2+ 和 Ca2+。研究发现,在 Ca2+ 和 (Cu0.5Ba0.5)2+ 掺杂体系中发现了含量小于 1.5% 的杂质相。随着掺杂离子半径的减小,轴长和电池体积也呈减小趋势。包括晶界数量和晶粒尺寸分布均匀性在内的外在因素有助于微波介电性能的发展。更重要的是,基于 P-V-L 键理论,研究表明键离子度、晶格能和键能的变化是介电常数、品质因数和共振频率温度系数的原因,其中 Nb-O 键在所有类型的键中拥有最大的键离子度和键能,Ti-O 键提供了总晶格能的约 52%。这项研究为通过调节键特性进一步提高金红石型 Zn0.15Nb0.3Ti0.55O2 陶瓷的微波介电性能提供了思路。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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