In2O3/CuO heterostructure derived from indium-copper bimetallic metal–organic frameworks to activate peroxymonosulfate for rapid degradation of tinidazole

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-07 DOI:10.1007/s10854-024-13431-5

Zhenliang Li, Zhongrui Zhang, Shaoying Yuan, Shuang Liu, Haoran Guo, Xiaoni Qi

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Abstract

A heterojunction photocatalyst In₂O₃/CuO-2 was prepared through hydrothermal method and pyrolysis in this work. Tinidazole (TNZ) was used as target pollutants to evaluate the catalytic performance of In₂O₃/CuO-2 with peroxymonosulfate (PMS) as oxidant. 30 mg of In₂O₃/CuO-2 with 1.0 mmol PMS could remove 98.9% TNZ (20 mg/L) in 20 min. The effects on the degradation efficiency of TNZ were investigated. Environmental application value of In₂O₃/CuO-2 was evaluated, which included the effects of reusability, water matric, inorganic ions, and organic contaminant mixture on catalytic degradation. It was discovered that •OH, O₂^•−, ¹O₂, and SO₄^•− were the major ROSs during the degradation process. This work might prove that the heterojunction In₂O₃/CuO-2 exhibited efficient degradation performance for environmental remediation.

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由铟铜双金属金属有机框架衍生的 In2O3/CuO 异质结构可激活过硫酸氢钠，用于快速降解替硝唑

本研究通过水热法和热解法制备了一种异质结光催化剂 In2O3/CuO-2。以提尼达唑（TNZ）为目标污染物，以过氧单硫酸盐（PMS）为氧化剂，评估 In2O3/CuO-2 的催化性能。30 毫克 In2O3/CuO-2 与 1.0 毫摩尔 PMS 在 20 分钟内可去除 98.9% 的 TNZ（20 毫克/升）。研究了 In2O3/CuO-2 对 TNZ 降解效率的影响。评估了 In2O3/CuO-2 的环境应用价值，包括可重复使用性、水母度、无机离子和有机污染物混合物对催化降解的影响。研究发现，-OH、O2--、1O2 和 SO4--是降解过程中的主要 ROS。这项工作可能证明了异质结 In2O3/CuO-2 在环境修复方面具有高效的降解性能。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.