Prashant Kumar Mishra, Rachit Dobhal, Somaditya Sen
{"title":"Fe/Li Co-doped CuO: enhanced photosensing and conductivity correlated with structural modifications","authors":"Prashant Kumar Mishra, Rachit Dobhal, Somaditya Sen","doi":"10.1007/s10854-024-13463-x","DOIUrl":null,"url":null,"abstract":"<div><p>The photocatalytic and electronic properties of sol–gel-prepared divalent Fe<sup>3+</sup> and Li<sup>+</sup> co-doped monoclinic (c2/c) Cu<sub>0.945</sub>Fe<sub>0.055-x</sub>Li<sub>x</sub>O powders were investigated. O-ions are in excess in Fe-rich samples, whereas O-vacancies (Vo) are prevalent in Li-rich samples due to the valence state differences between Fe<sup>3+</sup> and Li<sup>+</sup> ions. The bandgap remained largely unaffected, but lattice disorder increased with higher Li content. The electrical conductivity (<i>σ</i>) increased with increasing Li content. While the <i>p</i>-type nature decreased with increasing Li content, the electron mobility decreased with increasing Li content. The photocatalytic decomposition of harmful methylene blue (MB) dye was maximum for Cu<sub>0.945</sub>Fe<sub>0.0275</sub>Li<sub>0.0275</sub>O. For both Cu<sub>0.945</sub>Fe<sub>0.055</sub>O and Cu<sub>0.945</sub>Li<sub>0.055</sub>O, the degradation was lesser due to other physical processes, e.g., changes in the photocurrent. Light detection was faster in Fe-rich samples compared to pure and Li-rich samples. An attempt was made to form a heterojunction of ZnO/Cu<sub>0.945</sub>Fe<sub>0.014</sub>Li<sub>0.041</sub>O that exhibited significantly faster response times than their bulk counterparts for both pure and Li-rich samples. These findings highlight the potential of Cu<sub>0.945</sub>Fe<sub>0.055-x</sub>Li<sub>x</sub>O samples and heterojunction configurations for enhanced photocatalytic and sensing applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13463-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The photocatalytic and electronic properties of sol–gel-prepared divalent Fe3+ and Li+ co-doped monoclinic (c2/c) Cu0.945Fe0.055-xLixO powders were investigated. O-ions are in excess in Fe-rich samples, whereas O-vacancies (Vo) are prevalent in Li-rich samples due to the valence state differences between Fe3+ and Li+ ions. The bandgap remained largely unaffected, but lattice disorder increased with higher Li content. The electrical conductivity (σ) increased with increasing Li content. While the p-type nature decreased with increasing Li content, the electron mobility decreased with increasing Li content. The photocatalytic decomposition of harmful methylene blue (MB) dye was maximum for Cu0.945Fe0.0275Li0.0275O. For both Cu0.945Fe0.055O and Cu0.945Li0.055O, the degradation was lesser due to other physical processes, e.g., changes in the photocurrent. Light detection was faster in Fe-rich samples compared to pure and Li-rich samples. An attempt was made to form a heterojunction of ZnO/Cu0.945Fe0.014Li0.041O that exhibited significantly faster response times than their bulk counterparts for both pure and Li-rich samples. These findings highlight the potential of Cu0.945Fe0.055-xLixO samples and heterojunction configurations for enhanced photocatalytic and sensing applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.