R. Natarajan, M. Meena, M. Shalini, B. Samuel Ebinezer, R. S. Sundararajan, T. C. Sabari Girisun
{"title":"Growth and characterization of semi-organic, third-order nonlinear optical (NLO) phthalic acid potassium chloride (PAPC) single crystals","authors":"R. Natarajan, M. Meena, M. Shalini, B. Samuel Ebinezer, R. S. Sundararajan, T. C. Sabari Girisun","doi":"10.1007/s10854-024-13348-z","DOIUrl":null,"url":null,"abstract":"<div><p>The utilization of slow evaporation solutions has proven to be an effective method for obtaining single crystals of semi-organic NLO from an aqueous solution. Throughout the course of this experiment, the ambient temperature was employed. Information about the crystal’s structure was revealed through single-crystal XRD, showing that it was (PAPC) crystallized in a cubic system with space group F. Through the utilization of FT-IR analysis, the arrangement of functional groups within the developed crystal was identified. A 223 nm cut-off wavelength was determined through UV–Vis–NIR spectroscopy. Apart from linear optical properties like the extinction coefficient (K) and reflectance (R), various geometrical aspects were analyzed in this investigation. Furthermore, the crystal exhibited a significant degree of optical transparency. The analysis of the fluorescence (FL) spectrum has been employed to study the behavior of PAPC luminescence. Different frequencies ranging from 50 Hz to 200 kHz have been employed to investigate the dielectric characteristics of PAPC. The threshold value for laser-induced damage was discovered to be significantly higher when compared to KDP and other organic materials. The SEM was utilized to examine the surface morphology of the crystal for a more comprehensive understanding of its appearance. EDAX analysis was performed on the PAPC crystal to identify the elemental composition within. The electrical characteristics were determined through impedance analysis. We employed a Vickers microhardness tester to determine the brittleness index (B<sub>i</sub>), along with the hardness (H<sub>v</sub>), Meyer’s index (<i>n</i>), yield strength (σ<sub>y</sub>), fracture toughness (K<sub>c</sub>), and elastic stiffness constant (C<sub>11</sub>). The investigation of the crystal’s third-order nonlinear optical properties was conducted utilizing the Z-scan method with a nano-pulsed Nd:YAG laser. The material displays either genuine two-photon absorption or an excited-state absorption. PAPC emerges as a potential candidate for optical limiting devices owing to its elevated nonlinear absorption coefficient (0.96 × 10<sup>–10</sup> m/W) and reduced onset optical limiting threshold (2.14 × 10<sup>12</sup> W/m<sup>2</sup>).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13348-z.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13348-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The utilization of slow evaporation solutions has proven to be an effective method for obtaining single crystals of semi-organic NLO from an aqueous solution. Throughout the course of this experiment, the ambient temperature was employed. Information about the crystal’s structure was revealed through single-crystal XRD, showing that it was (PAPC) crystallized in a cubic system with space group F. Through the utilization of FT-IR analysis, the arrangement of functional groups within the developed crystal was identified. A 223 nm cut-off wavelength was determined through UV–Vis–NIR spectroscopy. Apart from linear optical properties like the extinction coefficient (K) and reflectance (R), various geometrical aspects were analyzed in this investigation. Furthermore, the crystal exhibited a significant degree of optical transparency. The analysis of the fluorescence (FL) spectrum has been employed to study the behavior of PAPC luminescence. Different frequencies ranging from 50 Hz to 200 kHz have been employed to investigate the dielectric characteristics of PAPC. The threshold value for laser-induced damage was discovered to be significantly higher when compared to KDP and other organic materials. The SEM was utilized to examine the surface morphology of the crystal for a more comprehensive understanding of its appearance. EDAX analysis was performed on the PAPC crystal to identify the elemental composition within. The electrical characteristics were determined through impedance analysis. We employed a Vickers microhardness tester to determine the brittleness index (Bi), along with the hardness (Hv), Meyer’s index (n), yield strength (σy), fracture toughness (Kc), and elastic stiffness constant (C11). The investigation of the crystal’s third-order nonlinear optical properties was conducted utilizing the Z-scan method with a nano-pulsed Nd:YAG laser. The material displays either genuine two-photon absorption or an excited-state absorption. PAPC emerges as a potential candidate for optical limiting devices owing to its elevated nonlinear absorption coefficient (0.96 × 10–10 m/W) and reduced onset optical limiting threshold (2.14 × 1012 W/m2).
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.