Evaluating the quantum confinement effects modulating exciton and electronic band structures of two-dimensional layered MoSSe films and their photodetection potentials

IF 6.8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2024-08-09 DOI:10.1007/s40843-024-3031-0

Yifan Ding (, ), Xudan Zhu (, ), Hongyu Tang (, ), Weiming Liu (, ), Shuwen Shen (, ), Jiajie Fan (, ), Yi Luo (, ), Yuxiang Zheng (, ), Chunxiao Cong (, ), Siyuan Luo (, ), Rongjun Zhang (, )

{"title":"Evaluating the quantum confinement effects modulating exciton and electronic band structures of two-dimensional layered MoSSe films and their photodetection potentials","authors":"Yifan Ding \n (, ), Xudan Zhu \n (, ), Hongyu Tang \n (, ), Weiming Liu \n (, ), Shuwen Shen \n (, ), Jiajie Fan \n (, ), Yi Luo \n (, ), Yuxiang Zheng \n (, ), Chunxiao Cong \n (, ), Siyuan Luo \n (, ), Rongjun Zhang \n (, )","doi":"10.1007/s40843-024-3031-0","DOIUrl":null,"url":null,"abstract":"<div><p>Emerging two-dimensional ternary transition metal dichalcogenide alloys have attracted much attention for their unique optical and optoelectronic properties, making them ideal candidates for optoelectronic applications. However, a comprehensive understanding of their quantum confinement effects and photoelectronic response characteristics remains crucial for device optimization and performance enhancement. In this study, we employed various spectroscopic techniques to investigate the optical properties and electronic band structures of molybdenum sulfide selenide (MoSSe) films with different layer numbers (4–11 layers). Our results revealed the splitting of Raman modes and shifting of phonon vibrational frequencies with increasing thickness, suggesting that MoSSe has strong interactions within the lattice. The A<sub>1g</sub> and E<sub>2g</sub><sup>1</sup> modes were mainly shifted by internal strain and dielectric screening effect versus thickness, respectively. The redshift phenomenon of A and B excitons with increasing thickness was attributed to the leading effect of quantum confinement on exciton properties and optical band gaps. We observed a strong decrease in the direct bandgap spectral weight in photoluminescence (PL) when the layer number increased from 4 to 5. In addition, we have fabricated MoSSe photodetectors that exhibit a broadband response in the visible wavelength band of 350–800 nm. Furthermore, the observed enhancement in photocurrent and responsivity with increasing film thickness underscored the potential of MoSSe-based devices for practical optoelectronic applications. This research contributes to advancing our fundamental understanding of MoSSe materials and paves the way for the design and development of high-performance optoelectronic devices.\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"67 10","pages":"3087 - 3095"},"PeriodicalIF":6.8000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40843-024-3031-0","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Emerging two-dimensional ternary transition metal dichalcogenide alloys have attracted much attention for their unique optical and optoelectronic properties, making them ideal candidates for optoelectronic applications. However, a comprehensive understanding of their quantum confinement effects and photoelectronic response characteristics remains crucial for device optimization and performance enhancement. In this study, we employed various spectroscopic techniques to investigate the optical properties and electronic band structures of molybdenum sulfide selenide (MoSSe) films with different layer numbers (4–11 layers). Our results revealed the splitting of Raman modes and shifting of phonon vibrational frequencies with increasing thickness, suggesting that MoSSe has strong interactions within the lattice. The A_1g and E_2g¹ modes were mainly shifted by internal strain and dielectric screening effect versus thickness, respectively. The redshift phenomenon of A and B excitons with increasing thickness was attributed to the leading effect of quantum confinement on exciton properties and optical band gaps. We observed a strong decrease in the direct bandgap spectral weight in photoluminescence (PL) when the layer number increased from 4 to 5. In addition, we have fabricated MoSSe photodetectors that exhibit a broadband response in the visible wavelength band of 350–800 nm. Furthermore, the observed enhancement in photocurrent and responsivity with increasing film thickness underscored the potential of MoSSe-based devices for practical optoelectronic applications. This research contributes to advancing our fundamental understanding of MoSSe materials and paves the way for the design and development of high-performance optoelectronic devices.

Abstract Image

查看原文本刊更多论文

评估调节二维层状 MoSSe 薄膜激子和电子能带结构的量子约束效应及其光探测潜力

新兴的二维三元过渡金属二掺杂合金因其独特的光学和光电特性而备受关注，成为光电应用的理想候选材料。然而，全面了解它们的量子约束效应和光电子响应特性对于器件优化和性能提升仍然至关重要。在本研究中，我们采用了多种光谱技术来研究不同层数（4-11 层）硫化硒化钼（MoSSe）薄膜的光学特性和电子能带结构。我们的研究结果表明，随着厚度的增加，拉曼模式发生了分裂，声子振动频率也发生了移动，这表明硒化钼在晶格内具有很强的相互作用。A1g 和 E2g1 模式主要分别受到内部应变和介电屏蔽效应随厚度变化的影响。A 和 B 激子随厚度增加而发生的红移现象归因于量子约束对激子特性和光带隙的主导效应。我们观察到，当层数从 4 层增加到 5 层时，光致发光（PL）的直接带隙光谱权重显著下降。此外，我们还制造出了 MoSSe 光电探测器，该探测器在 350-800 纳米的可见光波段表现出宽带响应。此外，观察到的光电流和响应率随薄膜厚度增加而增强，这凸显了基于 MoSSe 的器件在实际光电应用中的潜力。这项研究有助于增进我们对 MoSSe 材料的基本了解，并为设计和开发高性能光电器件铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.