Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices

IF 1.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Bulletin of Materials Science Pub Date : 2024-09-12 DOI:10.1007/s12034-024-03286-1

Susmita Das, Prabir Kumar Haldar, Pranab Kumar Sarkar

{"title":"Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices","authors":"Susmita Das, Prabir Kumar Haldar, Pranab Kumar Sarkar","doi":"10.1007/s12034-024-03286-1","DOIUrl":null,"url":null,"abstract":"<div>Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs2SnI6) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs2SnI6 material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs2SnI6 perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs2SnI6/ITO-PET memory device, we used Cs2SnI6 film as a switching layer and the device exhibits bipolar RS characteristics.</div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03286-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs₂SnI₆) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs₂SnI₆ material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs₂SnI₆ perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs₂SnI₆/ITO-PET memory device, we used Cs₂SnI₆ film as a switching layer and the device exhibits bipolar RS characteristics.

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无铅无机双卤化物过氧化物基存储器件中的双极电阻开关特性

由于对高密度数据存储的需求日益增长，基于双卤化物包晶的电阻式随机存取存储器（RRAM）近来已成为下一代光电存储器应用领域最前沿的有前途的候选材料。基于离子运动的快速开关是这类材料的主要特征，在电阻开关（RS）应用中发挥着重要作用。最近，无铅锡基双卤化物过氧化物因其卓越的稳定性、功能性和环保性而被认为是一种有利的材料。在此，我们报告了碘化铯锡（IV）（Cs2SnI6）包晶石的合成。合成的包晶石的 X 射线衍射（XRD）图证实了 Cs2SnI6 材料的形成。晶体学数据证实了纯立方相的形成，在室温下不存在任何其他相。我们还利用紫外可见光（UV）光谱和光致发光（PL）光谱研究了样品的光学特性。在紫外-可见吸收光谱中观察到 580 纳米左右的宽带。样品的光带隙为 1.68 eV。Cs2SnI6 perovskite 在 ~540 nm 处表现出强烈的 PL 发射。在这项工作中，为了制作柔性 Al/Cs2SnI6/ITO-PET 存储器件，我们使用 Cs2SnI6 薄膜作为开关层，该器件表现出双极 RS 特性。

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来源期刊

Bulletin of Materials Science 工程技术-材料科学：综合

CiteScore

3.40

自引率

5.60%

发文量

209

审稿时长

11.5 months

期刊介绍： The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.