Radiation Effects in VLSI Circuits – Part I: Historical Perspective

IF 2.5 4区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Technical Review Pub Date : 2024-08-12 DOI:10.1080/02564602.2024.2380904

Aryan Kannaujiya, Ambika Prasad Shah

引用次数: 0

Abstract

This review explains the historical perspective of single-event effects, single-event transitions, and single-event upsets. It delves into the concept of critical charge and offers a comprehensive ...

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超大规模集成电路中的辐射效应--第一部分：历史视角

这篇综述从历史角度解释了单次事件效应、单次事件转换和单次事件颠覆。它深入探讨了临界电荷的概念，并提供了全面的...

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IETE Technical Review 工程技术-电信学

CiteScore

5.70

自引率

4.20%

发文量

审稿时长

9 months

期刊介绍： IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.