Infiltration of Erbium ions (Er3+) in Porous Silicon Layer Synthesized by Electrochemical Method: Structural and Optical Properties Studies

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2024-09-12 DOI:10.1007/s12633-024-03136-z

Djamel Kehil, Salah Rahmouni, Noureddine Boukhenoufa, Abdelkrim Djebli, Hadjer mamine, Nihal Nasri, Hacene Bendjeffal

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引用次数: 0

Abstract

Porous silicon (Psi) has recently attracted considerable attention because of its unique optical and structural properties and capacity to be used in various applications. Due to the importance of this material, we have investigated the infiltration of trivalent erbium ions (Er³⁺) into silicon-generated pores using the electrochemical approach. The infiltration of Er³⁺ ions will be done simultaneously with the forming of porous silicon films on p-type (100) silicon substrates. Generating the porous layer can improve the evenness and integration of Er inside the material. During infiltration, Er³⁺ ions can also undergo reduction or co-deposition with other elements at the cathode. The infiltration studies were conducted while subject to the influence of the current density (15–30 mA/cm²). The results showed that the emission of photoluminescence in porous silicon filled with erbium was caused by the presence of Er silicate and Er oxide that developed within the silicon pores during the electrochemical reaction. The reason for introducing rare earth ions is their exceptional optical characteristics, encompassing distinct emission lines and extended lifespan. We comprehensively investigate infiltration and outline the electrochemical etching parameters necessary to create porous silicon. Rare earth ions exhibit exceptional optical luminescence characteristics, displaying a diverse spectrum of optical spectra over the infrared, visible, and ultraviolet regions.

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电化学方法合成的多孔硅层中铒离子 (Er3+) 的渗透：结构和光学特性研究

多孔硅（Psi）因其独特的光学和结构特性以及在各种应用中的能力，最近引起了广泛关注。鉴于这种材料的重要性，我们研究了利用电化学方法将三价铒离子（Er3+）渗入硅产生的孔隙中。在 p 型（100）硅衬底上形成多孔硅薄膜时，将同时渗入 Er3+ 离子。生成多孔层可以提高材料内部 Er 的均匀度和整合度。在渗入过程中，Er3⁺离子还可能与阴极的其他元素发生还原或共沉积。浸润研究是在受电流密度（15-30 mA/cm2）影响的情况下进行的。结果表明，在填充了铒的多孔硅中发射光致发光的原因是在电化学反应过程中硅孔隙中形成了硅酸铒和氧化铒。引入稀土离子的原因是其特殊的光学特性，包括独特的发射线和更长的寿命。我们对渗透进行了全面研究，并概述了创建多孔硅所需的电化学蚀刻参数。稀土离子表现出非凡的光学发光特性，在红外、可见光和紫外区域显示出不同的光学光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.