A Low Energy Loss Superjunction LIGBT with Integrated Double Self-Biased MOS

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2024-08-14 DOI:10.1007/s12633-024-03112-7
Ao Wu, Weizhong Chen, Xiangwei Zeng, Zikai Wei, Yufan Xiao
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引用次数: 0

Abstract

A novel Superjunction LIGBT with integrated planar Self-Biased PMOS (abbrev.SBP) and planar Self-Biased NMOS (abbrev.SBN), named DM-SJ-LIGBT is proposed and investigated. The SBN is connected in parallel with the main Gate, thus it is adaptively turned on and turned off with the main Gate. The gate and drain of SBP are shorted together to emitter electrode, and the P-pillar work as the source of SBP. Consequently, the SBP could realize adaptively turned on and turned off ability without additional gate signal control .At the forward conduction state, the planar SBN and trench main Gate are turned on with double electron channel, thus it effectively reduce \({V}_{ON}\) compared with the conventional SJ-LIGBT. However, the SBP is turn-off state with \({V}_{GS,P}>{V}_{TH,P}\). At the turn off state, The SBP is automatically turned on to extract the holes when the \({V}_{GS,P}<{V}_{TH,P}\), which reduces the turn-off loss \({E}_{OFF}\) significantly. Consequently, the DM-SJ-LIGBT obtains a superior trade-off relationship between forward conduction voltage \({V}_{ON}\) and \({E}_{OFF}\) . At the same \({E}_{OFF}\) of 0.61 mJ/\(cm^2\), the \({V}_{ON}\) of the DM-SJ-LIGBT with \({T}_{SBN}\) =100nm and the DM-SJ-LIGBT with \({T}_{SBN}\) =50 nm is 11% and 22% lower than the conventional SJ-LIGBT, respectively. Moreover, When \({V}_{ON}\) is 1.36 V, the \({E}_{OFF}\) of the DM-SJ-LIGBT with \({T}_{SBN}\)=100nm and the DM-SJ-LIGBT with \({T}_{SBN}\)=50 nm are 0.354 and 0.147 mJ/\(cm^2\) respectively, which is 42% and 76% less than that of the conventional SJ-LIGBT.

集成双自偏压 MOS 的低能量损耗超结 LIGBT
我们提出并研究了一种新型超结 LIGBT,它集成了平面自偏压 PMOS(简称 SBP)和平面自偏压 NMOS(简称 SBN),命名为 DM-SJ-LIGBT。SBN 与主栅极并联,因此能与主栅极一起自适应地开启和关闭。SBP 的栅极和漏极与发射极短路,而 P 柱则作为 SBP 的源极工作。因此,无需额外的栅极信号控制,SBP 就能实现自适应开启和关闭。在正向传导状态下,平面 SBN 和沟槽主栅极通过双电子通道开启,因此与传统的 SJ-LIGBT 相比,它能有效地降低 \({V}_{ON}\)。然而,SBP 在关断状态时会产生 \({V}_{GS,P}>{V}_{TH,P}\)。在关断状态,当 \({V}_{GS,P}<{V}_{TH,P}\) 时,SBP 会自动打开以提取孔,这就大大降低了关断损耗 \({E}_{OFF}\)。因此,DM-SJ-LIGBT 在正向导通电压 \({V}_{ON}\) 和 \({E}_{OFF}\) 之间获得了出色的权衡关系。在0.61 mJ/(cm^2\)的相同\({E}_{OFF}\)条件下,\({T}_{SBN}\)=100nm的DM-SJ-LIGBT和\({T}_{SBN}\)=50nm的DM-SJ-LIGBT的\({V}_{ON}\)分别比传统的SJ-LIGBT低11%和22%。此外,当\({V}_{ON}\)为1.36 V时,\({E}_{OFF}\)为100 nm的DM-SJ-LIGBT和\({T}_{SBN}\)为50 nm的DM-SJ-LIGBT的\({E}_{OFF}\)分别为0.354 mJ/\(cm^2\)和0.147 mJ/\(cm^2\),比传统的SJ-LIGBT分别低42%和76%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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