Ao Wu, Weizhong Chen, Xiangwei Zeng, Zikai Wei, Yufan Xiao
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引用次数: 0
Abstract
A novel Superjunction LIGBT with integrated planar Self-Biased PMOS (abbrev.SBP) and planar Self-Biased NMOS (abbrev.SBN), named DM-SJ-LIGBT is proposed and investigated. The SBN is connected in parallel with the main Gate, thus it is adaptively turned on and turned off with the main Gate. The gate and drain of SBP are shorted together to emitter electrode, and the P-pillar work as the source of SBP. Consequently, the SBP could realize adaptively turned on and turned off ability without additional gate signal control .At the forward conduction state, the planar SBN and trench main Gate are turned on with double electron channel, thus it effectively reduce \({V}_{ON}\) compared with the conventional SJ-LIGBT. However, the SBP is turn-off state with \({V}_{GS,P}>{V}_{TH,P}\). At the turn off state, The SBP is automatically turned on to extract the holes when the \({V}_{GS,P}<{V}_{TH,P}\), which reduces the turn-off loss \({E}_{OFF}\) significantly. Consequently, the DM-SJ-LIGBT obtains a superior trade-off relationship between forward conduction voltage \({V}_{ON}\) and \({E}_{OFF}\) . At the same \({E}_{OFF}\) of 0.61 mJ/\(cm^2\), the \({V}_{ON}\) of the DM-SJ-LIGBT with \({T}_{SBN}\) =100nm and the DM-SJ-LIGBT with \({T}_{SBN}\) =50 nm is 11% and 22% lower than the conventional SJ-LIGBT, respectively. Moreover, When \({V}_{ON}\) is 1.36 V, the \({E}_{OFF}\) of the DM-SJ-LIGBT with \({T}_{SBN}\)=100nm and the DM-SJ-LIGBT with \({T}_{SBN}\)=50 nm are 0.354 and 0.147 mJ/\(cm^2\) respectively, which is 42% and 76% less than that of the conventional SJ-LIGBT.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.