Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2024-08-27 DOI:10.1007/s12633-024-03113-6

Min Seok Kim, Sang Ho Lee, Jin Park, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, In Man Kang

{"title":"Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking","authors":"Min Seok Kim, Sang Ho Lee, Jin Park, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, In Man Kang","doi":"10.1007/s12633-024-03113-6","DOIUrl":null,"url":null,"abstract":"<div><p>Herein, the advantages of sheet stacking in polycrystalline Si (Poly-Si)–based nanosheet MOSFETs and CMOS inverters were statistically analyzed through technology computer-aided design simulations. Poly-Si is used as the channel material to make the high-density three-dimensional structure in a simple process. We studied the transfer characteristics of single-layer nanosheet (SN) MOSFETs and 3-layer multi-bridge nanosheet (MN) MOSFETs depending on the location and the number of grain boundaries (GBs). Further, the DC/switching performance of SN CMOS and MN CMOS inverters was analyzed based on the location and number of GBs. The multilayer stacked structure not only increased the average on state current and switching speed but also reduced the dispersion of characteristics and performance. In addition, multilayer stacked structure increased the yield based on the 3 sigma-level. Therefore, the stacked MN structure is suitable for implementation in MOSFETs and CMOS inverters with high performance and reliability against fluctuations caused by poly-Si GBs.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5855 - 5864"},"PeriodicalIF":2.8000,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03113-6","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

Herein, the advantages of sheet stacking in polycrystalline Si (Poly-Si)–based nanosheet MOSFETs and CMOS inverters were statistically analyzed through technology computer-aided design simulations. Poly-Si is used as the channel material to make the high-density three-dimensional structure in a simple process. We studied the transfer characteristics of single-layer nanosheet (SN) MOSFETs and 3-layer multi-bridge nanosheet (MN) MOSFETs depending on the location and the number of grain boundaries (GBs). Further, the DC/switching performance of SN CMOS and MN CMOS inverters was analyzed based on the location and number of GBs. The multilayer stacked structure not only increased the average on state current and switching speed but also reduced the dispersion of characteristics and performance. In addition, multilayer stacked structure increased the yield based on the 3 sigma-level. Therefore, the stacked MN structure is suitable for implementation in MOSFETs and CMOS inverters with high performance and reliability against fluctuations caused by poly-Si GBs.

查看原文本刊更多论文

通过片式堆叠提高纳米片 CMOS 逻辑逆变器多晶硅晶粒边界抗扰度的统计分析

本文通过技术计算机辅助设计模拟，对基于多晶硅（Poly-Si）的纳米片 MOSFET 和 CMOS 逆变器中片堆叠的优势进行了统计分析。采用多晶硅作为沟道材料，以简单的工艺制造出高密度的三维结构。我们研究了单层纳米片（SN）MOSFET 和三层多桥纳米片（MN）MOSFET 的传输特性，具体取决于晶界（GB）的位置和数量。此外，还根据晶界的位置和数量分析了 SN CMOS 和 MN CMOS 逆变器的直流/开关性能。多层堆叠结构不仅提高了平均导通电流和开关速度，还降低了特性和性能的分散性。此外，多层堆叠结构还提高了基于 3 sigma 级的良品率。因此，堆叠 MN 结构适用于 MOSFET 和 CMOS 逆变器，具有高性能和高可靠性，可抵御多晶硅 GB 引起的波动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.