Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications

Abstract

The current investigation inquiry involves silicon dioxide (SiO₂) and nickel oxide (NiO) nanoparticles to enhance the structural and dielectric properties of a polyvinyl alcohol (PVA) with polyethylene glycol (PEG) combination for use in flexible pressure sensors and nanoelectrical devices. Solution casting was used to fabricate PVA-PEG-SiO₂/NiO nanocomposites at various weight percentages of (SiO₂/NiO) N.Ps (0, 2, 4, 6 and 8) wt%. The structural properties of PVA-PEG-SiO₂/NiO nanocomposites were studied by X-ray diffraction (XRD), and the amorphous state of the mixture consisting of polyvinyl alcohol (PVA) and polyethylene glycol (PEG) was revealed. Furthermore, the characteristic peak of the original polymers was much smaller at higher doping concentrations. According to field emission scanning electron microscopy (FE-SEM), when the weight percentage approaches 8%, the top surface of the (PVA-PEG-SiO₂/NiO) N.Cs films exhibits homogenous and cohesive clumps or fragments dispersed randomly. Optical microscopy made it possible to observe that nanoparticles (SiO₂/NiO) generate an integrated network inside the matrix of polymers, unlike the pure film of (PVA-PEG). The electrical properties of alternating current illustrate that as the frequency of the applied electrical field increases, the dielectric constant and dielectric loss of nanocomposites decline. Also, on the contrary, these values increase in conjunction with the increase in the concentration of nanoparticles, and the highest value is at a frequency of 100 Hz at a concentration of 8%. The (PVA-PEG) blend’s dielectric constant and A.C. electrical conductivity were improved by almost 300% and 112%, respectively, at the highest addition rate (8 wt.%). The findings obtained revealed that the structural and AC electrical conductivity were enhanced by doping (PVA-PEG) with (SiO₂/NiO) NPs. Findings indicated that the (PVA-PEG-SiO₂/NiO) nanostructures would be excellent materials for a range of nanoelectronics industries. The results obtained showed an increase in parallel capacity. It reached 400 pf with an increase in applied pressure, as well as an increase in sensitivity to pressure of about 77.2 with the biggest percentage of weight addition of nanoparticles.