Charge Plasma Based Si1-xGex Sourced Nanowire Tunnel Field Effect Transistor Oxygen Gas Device with Enhanced Sensitivity

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2024-08-30 DOI:10.1007/s12633-024-03126-1

Navaneet Kumar Singh, Chandan Kumar, Thakur Prasad Mahato, Suraj Kumar, Saquib Azam, Shradhya Singh, Naveen Kumar, Prashant Kumar Singh, Rajib Kar, Durbadal Mandal

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Abstract

In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O₂) gas molecules by means of a Silicon Germanium (Si_1-xGe_x) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are I_ON, I_OFF, I_ON/I_OFF, Subthreshold slope (SS), and threshold voltage (V_t). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O₂ gas sensor. The presented Oxygen gas sensor has an I_ON/I_OFF ratio of 3.65 × 10⁷ and a subthreshold slope of 58.23 mV/decade.

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灵敏度更高的基于等离子体的 Si1-xGex 源纳米线隧道场效应晶体管氧气器件

本文提出了基于电荷等离子体纳米线隧道场效应晶体管的传感器，通过硅锗（Si1-xGex）源器件（缩写为 SiGe-CP-NW-TFET）识别氧气（O2）气体分子。SiGe-CP-NW-TFET 的电气性能与传统的电荷等离子体纳米线隧道场效应晶体管 (CP-NW-TFET) 进行了比较。用于比较的测量参数包括 ION、IOFF、ION/IOFF、次阈值斜率 (SS) 和阈值电压 (Vt)。与 Si-CP-NW-TFET 相比，拟议的 SiGe-CP-NW-TFET 具有更好的电气性能。此外，还比较了两种器件的电动势、电场、电荷载流子和能带图等器件特性。在气体分子吸附的背景下，通过对隧道结的综合静电研究，还探讨了拟议传感器的基本物理原理。此外，还研究了拟议的 SiGe-CP-NW-TFET 器件约束对电气性能指标的影响。研究考虑了器件参数，如氧化物厚度、扩展栅极长度、硅薄膜厚度以及源侧 SiGe 的摩尔浓度。分析了氧化物厚度、扩展栅极长度、氮化硅半径和源侧锡锗（摩尔）浓度对氧气传感器灵敏度的影响。该氧气传感器的离子/离子交换比为 3.65 × 107，阈下斜率为 58.23 mV/decade。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.