Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate

IF 2.4 4区材料科学 Q2 CRYSTALLOGRAPHY

Crystals Pub Date : 2024-08-23 DOI:10.3390/cryst14090748

Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Sho Nagatomo, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita

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引用次数: 0

Abstract

The surface recrystallization model of the fully amorphized C3H5-molecular-ion-implanted silicon (Si) substrate is investigated. Transmission electron microscopy is performed to observe the amorphous/crystalline interface near the C3H5-molecular-ion-implanted Si substrate surface after the subsequent recovery thermal annealing treatment. At a depth of high-concentration carbon of approximately 4.8 × 1020 atoms/cm3, recrystallization from the crystalline template to the surface by solid-phase epitaxial growth is partially delayed, and the activation energy was estimated to be 2.79 ± 0.14 eV. The change in the crystalline fraction of the fully amorphized C3H5-molecular-ion-implanted Si substrate surface is quantitatively evaluated from the binding energy of Si 2p spectra by X-ray photoelectron spectroscopy. Using the Kolmogorov–Johnson–Mehl–Avrami equation, the surface recrystallization of the fully amorphized C3H5-molecular-ion-implanted Si substrate is assumed to proceed two-dimensionally, and its activation energy is obtained as 2.71 ± 0.28 eV without the effect of carbon. Technology computer-aided design (TCAD) process simulations calculate recrystallization under the effect of high-concentration carbon and demonstrate the reach of some crystalline regions to the surface first. In the fully amorphized C3H5-molecular-ion-implanted Si substrate, it is considered that recrystallization is partially delayed due to high-concentration carbon and surface recrystallization proceeds two-dimensionally from some crystalline regions reaching the surface first.

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完全非晶化 C3H5 分子离子注入硅衬底的表面再结晶模型

研究了完全非晶化的 C3H5 分子离子注入硅（Si）衬底的表面再结晶模型。透射电子显微镜观察了 C3H5 分子离子注入硅衬底表面经后续恢复热退火处理后附近的非晶/晶体界面。在大约 4.8 × 1020 原子/立方厘米的高浓度碳深度，固相外延生长从晶体模板到表面的再结晶部分延迟，活化能估计为 2.79 ± 0.14 eV。通过 X 射线光电子能谱的 Si 2p 光谱结合能，定量评估了完全非晶化的 C3H5 分子离子注入硅衬底表面结晶部分的变化。利用 Kolmogorov-Johnson-Mehl-Avrami 方程，假定完全非晶化的 C3H5 分子离子注入硅衬底的表面再结晶以二维方式进行，并得出其活化能为 2.71 ± 0.28 eV（不含碳的影响）。技术计算机辅助设计（TCAD）过程模拟计算了高浓度碳作用下的再结晶过程，并证明了某些结晶区域会首先到达表面。在完全非晶化的 C3H5 分子离子注入硅衬底中，由于高浓度碳的作用，再结晶被部分延迟，表面再结晶从部分结晶区首先到达表面的二维过程中进行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Crystals CRYSTALLOGRAPHYMATERIALS SCIENCE, MULTIDIS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

4.20

自引率

11.10%

发文量

1527

审稿时长

16.12 days

期刊介绍： Crystals (ISSN 2073-4352) is an open access journal that covers all aspects of crystalline material research. Crystals can act as a reference, and as a publication resource, to the community. It publishes reviews, regular research articles, and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. Therefore, there is no restriction on article length. Full experimental details must be provided to enable the results to be reproduced. Crystals provides a forum for the advancement of our understanding of the nucleation, growth, processing, and characterization of crystalline materials. Their mechanical, chemical, electronic, magnetic, and optical properties, and their diverse applications, are all considered to be of importance.