{"title":"Recent progress of indium-bearing group-III nitrides and devices: a review","authors":"Yixun He, Linhao Li, Jiaying Xiao, Liwei Liu, Guoqiang Li, Wenliang Wang","doi":"10.1007/s11082-024-07459-4","DOIUrl":null,"url":null,"abstract":"<p>During the past decades, group-III nitrides have emerged as a new impetus for the development of semiconductor industry and attracted significant attentions in different fields. Among them, indium-bearing group-III nitrides, such as InGaN, InAlN and their quaternary alloy InAlGaN show an adjustable bandgap in wide range including visible spectrum and ultraviolet spectrum, and their excellent electronic properties have been predicted by theoretical calculations. Therefore, indium-bearing group-III nitrides demonstrate great potential as solid lighting and photoelectric detection materials. However, the growth of high-quality indium-bearing group-III nitrides is hindered by the phase segregation of indium component and the lattice mismatch between substrate and epitaxial layer. Tremendous efforts have been paid to solve these issues, and remarkable results have been achieved accordingly. This review mainly focuses on the impressive results of theoretical calculation on properties of indium-bearing group-III nitrides and the breakthroughs in their epitaxial growth, together with the development of electron devices and photoelectric devices based on indium-bearing group-III nitrides. Based on the recent progress, the prospective for the future evolution of indium-bearing group-III nitrides and devices is speculated ultimately. This review provides a guideline for better understanding of the development of indium-bearing group-III nitrides and devices.</p>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11082-024-07459-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
During the past decades, group-III nitrides have emerged as a new impetus for the development of semiconductor industry and attracted significant attentions in different fields. Among them, indium-bearing group-III nitrides, such as InGaN, InAlN and their quaternary alloy InAlGaN show an adjustable bandgap in wide range including visible spectrum and ultraviolet spectrum, and their excellent electronic properties have been predicted by theoretical calculations. Therefore, indium-bearing group-III nitrides demonstrate great potential as solid lighting and photoelectric detection materials. However, the growth of high-quality indium-bearing group-III nitrides is hindered by the phase segregation of indium component and the lattice mismatch between substrate and epitaxial layer. Tremendous efforts have been paid to solve these issues, and remarkable results have been achieved accordingly. This review mainly focuses on the impressive results of theoretical calculation on properties of indium-bearing group-III nitrides and the breakthroughs in their epitaxial growth, together with the development of electron devices and photoelectric devices based on indium-bearing group-III nitrides. Based on the recent progress, the prospective for the future evolution of indium-bearing group-III nitrides and devices is speculated ultimately. This review provides a guideline for better understanding of the development of indium-bearing group-III nitrides and devices.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.