Pressure-induced band gap shift and enhanced optical properties of quaternary Heusler TaAlCuCo: DFT study

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
El Mustapha. Hrida, Soufiane. Bahhar, Abdellah. Tahiri, Mohamed Naji, Mohamed. Idiri
{"title":"Pressure-induced band gap shift and enhanced optical properties of quaternary Heusler TaAlCuCo: DFT study","authors":"El Mustapha. Hrida, Soufiane. Bahhar, Abdellah. Tahiri, Mohamed Naji, Mohamed. Idiri","doi":"10.1007/s11082-024-07374-8","DOIUrl":null,"url":null,"abstract":"<p>The following work presents a theoretical study on new quaternary Heusler compounds called TaAlCuCo under varying pressures from 0 to 100 GPa. The study comprehensively investigates the material's structural, elastic, mechanical, electronic, optical, and vibrational properties. The results reveal that as the applied pressure increases, the lattice parameters of TaAlCuCo decrease from 6.058465 to 5.476836 Å. Furthermore, the material exhibits desirable characteristics such as ductility, metallic bonding, and stability even under high pressure. Notably, TaAlCuCo demonstrates anisotropic behavior, indicating that its properties vary depending on the measurement direction. The study also observes a widening of the material's bandgap from 0.010 to 0.333 eV with increasing pressure, suggesting a decline in conductivity. Additionally, TaAlCuCo exhibits favorable optical properties, including a high refractive index, absorption, reflectivity, and conductivity, thereby indicating its potential as a UV filter and for use optoelectronic devices.</p>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11082-024-07374-8","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The following work presents a theoretical study on new quaternary Heusler compounds called TaAlCuCo under varying pressures from 0 to 100 GPa. The study comprehensively investigates the material's structural, elastic, mechanical, electronic, optical, and vibrational properties. The results reveal that as the applied pressure increases, the lattice parameters of TaAlCuCo decrease from 6.058465 to 5.476836 Å. Furthermore, the material exhibits desirable characteristics such as ductility, metallic bonding, and stability even under high pressure. Notably, TaAlCuCo demonstrates anisotropic behavior, indicating that its properties vary depending on the measurement direction. The study also observes a widening of the material's bandgap from 0.010 to 0.333 eV with increasing pressure, suggesting a decline in conductivity. Additionally, TaAlCuCo exhibits favorable optical properties, including a high refractive index, absorption, reflectivity, and conductivity, thereby indicating its potential as a UV filter and for use optoelectronic devices.

Abstract Image

压力诱导的四元 Heusler TaAlCuCo 带隙移动和增强的光学特性:DFT 研究
以下工作介绍了在 0 至 100 GPa 不同压力下对名为 TaAlCuCo 的新型四元 Heusler 化合物的理论研究。该研究全面考察了材料的结构、弹性、机械、电子、光学和振动特性。研究结果表明,随着施加压力的增加,TaAlCuCo 的晶格参数从 6.058465 Å 下降到 5.476836 Å。此外,即使在高压下,该材料也能表现出理想的特性,如延展性、金属键和稳定性。值得注意的是,TaAlCuCo 表现出各向异性,表明其特性随测量方向的不同而变化。研究还观察到,随着压力的增加,材料的带隙从 0.010 eV 扩大到 0.333 eV,这表明导电性有所下降。此外,TaAlCuCo 还具有良好的光学特性,包括高折射率、高吸收率、高反射率和高导电率,这表明它具有作为紫外线滤光器和光电器件的潜力。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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