{"title":"Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage","authors":"Xinkun Zhang, Haoran Qie, Yu Zhou, Yaozong Zhong, Jianxun Liu, Quan Dai, Qian Li, Xiaoning Zhan, Xiaolu Guo, Xin Chen, Qian Sun, Hui Yang","doi":"10.35848/1882-0786/ad7349","DOIUrl":null,"url":null,"abstract":"The degradation of an n<sup>++</sup> GaN regrown ohmic contact in a MIS-HEMT device induced by ion beam etching (IBE) damages and relevant mechanisms have been studied. Abnormal <italic toggle=\"yes\">I–V</italic> behaviors of the etched n<sup>++</sup> GaN were observed by the transfer length method using a Ti/Al/Ni/Au stack as the contact metal, and it can be recovered with the assistance of post-metallization rapid thermal annealing. According to further analysis, we speculate that the degradation of the ohmic contact originates from the preferential loss of nitrogen by IBE, which boosts the oxygen incorporation and formation of an oxide layer isolating the contact metal from the n<sup>++</sup> GaN.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"13 1","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad7349","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
The degradation of an n++ GaN regrown ohmic contact in a MIS-HEMT device induced by ion beam etching (IBE) damages and relevant mechanisms have been studied. Abnormal I–V behaviors of the etched n++ GaN were observed by the transfer length method using a Ti/Al/Ni/Au stack as the contact metal, and it can be recovered with the assistance of post-metallization rapid thermal annealing. According to further analysis, we speculate that the degradation of the ohmic contact originates from the preferential loss of nitrogen by IBE, which boosts the oxygen incorporation and formation of an oxide layer isolating the contact metal from the n++ GaN.
期刊介绍:
Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).