Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Xinkun Zhang, Haoran Qie, Yu Zhou, Yaozong Zhong, Jianxun Liu, Quan Dai, Qian Li, Xiaoning Zhan, Xiaolu Guo, Xin Chen, Qian Sun, Hui Yang
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引用次数: 0

Abstract

The degradation of an n++ GaN regrown ohmic contact in a MIS-HEMT device induced by ion beam etching (IBE) damages and relevant mechanisms have been studied. Abnormal I–V behaviors of the etched n++ GaN were observed by the transfer length method using a Ti/Al/Ni/Au stack as the contact metal, and it can be recovered with the assistance of post-metallization rapid thermal annealing. According to further analysis, we speculate that the degradation of the ohmic contact originates from the preferential loss of nitrogen by IBE, which boosts the oxygen incorporation and formation of an oxide layer isolating the contact metal from the n++ GaN.
离子束蚀刻损伤诱发的 n-GaN 欧姆接触退化机制
我们研究了离子束蚀刻(IBE)损伤引起的 MIS-HEMT 器件中 n++ GaN 再生欧姆触点的退化及其相关机制。使用钛/铝/镍/金叠层作为接触金属,通过转移长度法观察到了蚀刻后 n++ GaN 的异常 I-V 行为。根据进一步的分析,我们推测欧姆接触的退化源于 IBE 优先损失氮,从而促进了氧的掺入并形成了氧化层,将接触金属与 n++ GaN 隔离开来。
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来源期刊
Applied Physics Express
Applied Physics Express 物理-物理:应用
CiteScore
4.80
自引率
8.70%
发文量
310
审稿时长
1.2 months
期刊介绍: Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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