{"title":"Structural, nano texture, and optical study of Vanadium-doped zinc oxide thin films for blue LEDs","authors":"Apoorva Katoch, Navneet Kaur, Davinder Kumar, Balraj Singh, Vandana Shinde, Raminder Kaur","doi":"10.1007/s10971-024-06517-3","DOIUrl":null,"url":null,"abstract":"<div><p>The judicious use of transition metals, notably vanadium (V), is critical to improving zinc oxide (ZnO) photoelectric performance. This research reveals the transforming effect of different V doping levels on zinc oxide (V:ZnO) thin films precisely manufactured using a sol-gel dip-coating process. X-ray diffraction (XRD) reveals the evolving characteristics of the films, revealing a shift towards increased structural coherence and preferred orientation as V doping concentrations increase. Scanning electron microscopy (SEM) and its nano texture fractal studies reveal a gradual refinement in the texture and arrangement of V:ZnO films with increased doping levels. The effective V doping inside the ZnO thin films is confirmed by energy dispersive spectroscopy (EDS). Furthermore, the ultraviolet-visible (UV-Vis) absorption coefficient increases when the Urbach energy (E<sub>U</sub>) increases and the energy gap (E<sub>g</sub>) decreases. Notably, V:ZnO displays exceptional emissions in the intrinsic excitation region at 300 <i>nm</i>and within the defect emission range of 380–650 <i>nm</i> at 3% dopingmaking it a promising candidate for blue LED applications. However, care is advised since extensive doping may impair the photoluminescence properties of ZnO. Urbach tails in weak absorption region decreased with increasing % of V in ZnO. Urbach energies (E<sub>u</sub>) were in the 0.32–0.52 meV range for as-deposited and annealed films. This was used to account for the disorder of the films—an inverse relation was observed between Urbach energy and optical band energy as a result of doping. Research findings presented in this work give significant information on the complexities of V doping in ZnO, paving the way for advanced optoelectronic applications, particularly in blue LEDs.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":664,"journal":{"name":"Journal of Sol-Gel Science and Technology","volume":"112 2","pages":"332 - 347"},"PeriodicalIF":2.3000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Sol-Gel Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10971-024-06517-3","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0
Abstract
The judicious use of transition metals, notably vanadium (V), is critical to improving zinc oxide (ZnO) photoelectric performance. This research reveals the transforming effect of different V doping levels on zinc oxide (V:ZnO) thin films precisely manufactured using a sol-gel dip-coating process. X-ray diffraction (XRD) reveals the evolving characteristics of the films, revealing a shift towards increased structural coherence and preferred orientation as V doping concentrations increase. Scanning electron microscopy (SEM) and its nano texture fractal studies reveal a gradual refinement in the texture and arrangement of V:ZnO films with increased doping levels. The effective V doping inside the ZnO thin films is confirmed by energy dispersive spectroscopy (EDS). Furthermore, the ultraviolet-visible (UV-Vis) absorption coefficient increases when the Urbach energy (EU) increases and the energy gap (Eg) decreases. Notably, V:ZnO displays exceptional emissions in the intrinsic excitation region at 300 nmand within the defect emission range of 380–650 nm at 3% dopingmaking it a promising candidate for blue LED applications. However, care is advised since extensive doping may impair the photoluminescence properties of ZnO. Urbach tails in weak absorption region decreased with increasing % of V in ZnO. Urbach energies (Eu) were in the 0.32–0.52 meV range for as-deposited and annealed films. This was used to account for the disorder of the films—an inverse relation was observed between Urbach energy and optical band energy as a result of doping. Research findings presented in this work give significant information on the complexities of V doping in ZnO, paving the way for advanced optoelectronic applications, particularly in blue LEDs.
期刊介绍:
The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.