{"title":"Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM","authors":"Yifei Yin, Toshihiro Nakaoka","doi":"10.1007/s10825-024-02228-8","DOIUrl":null,"url":null,"abstract":"<div><p>We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S<sub>21</sub> between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1380 - 1390"},"PeriodicalIF":2.2000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02228-8.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02228-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S21 between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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