A simulation study of electrostatically doped silicene and graphene nanoribbon FETs

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-09-10 DOI:10.1007/s10825-024-02224-y

Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad

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引用次数: 0

Abstract

This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the I_ON/I_OFF ratio to 3.8 × 10⁵ in SiNR-FET compared to 3.9 × 10³ in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g_m) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.

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静电掺杂硅烯和石墨烯纳米带 FET 的模拟研究

本文通过基于量子的电子传输模拟，评估了静电掺杂硅纳米带场效应晶体管（ED SiNR-FET）和石墨烯纳米带场效应晶体管（ED GNR-FET）的性能。研究评估了色带宽度和器件几何形状的影响，发现 ED SiNR-FET 通常优于 ED GNR-FET，特别是在抗杂质和短沟道效应方面。研究确定了实现卓越性能的最佳带宽，并引入了扩展沟道 ED（ECED）结构，该结构显著提高了 SiNR-FET 的 ION/IOFF 比率，使其达到 3.8 × 105，而在 15 nm 器件中，GNR-FET 的 ION/IOFF 比率仅为 3.9 × 103。此外，对不同沟道和栅极长度的 ECED SiNR-FET 和 ECED GNR-FET 的分析表明，ECED 器件适用于低功耗和高性能应用，其中 ECED SiNR-FET 显示出 64 mV/dec 的出色亚阈值摆幅 (SS) 和 63 µS 的高跨导 (gm)。这项研究证实了 SiNR-FET 比 GNR-FET 更先进的性能，以及 ECED SiNR-FET 在各种应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.