{"title":"Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer","authors":"Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen","doi":"10.1109/LMAG.2024.3459813","DOIUrl":null,"url":null,"abstract":"Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al\n<sub>2</sub>\nO\n<sub>3</sub>\n, and HfO\n<sub>2</sub>\n). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO\n<sub>2</sub>\n. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO\n<sub>2</sub>\n film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10679049/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al
2
O
3
, and HfO
2
). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO
2
. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO
2
film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.
期刊介绍:
IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest.
IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.