{"title":"Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer","authors":"Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen","doi":"10.1109/LMAG.2024.3459813","DOIUrl":null,"url":null,"abstract":"Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al\n<sub>2</sub>\nO\n<sub>3</sub>\n, and HfO\n<sub>2</sub>\n). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO\n<sub>2</sub>\n. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO\n<sub>2</sub>\n film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10679049/","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al
2
O
3
, and HfO
2
). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO
2
. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO
2
film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.