Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer

IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen
{"title":"Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer","authors":"Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen","doi":"10.1109/LMAG.2024.3459813","DOIUrl":null,"url":null,"abstract":"Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al\n<sub>2</sub>\nO\n<sub>3</sub>\n, and HfO\n<sub>2</sub>\n). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO\n<sub>2</sub>\n. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO\n<sub>2</sub>\n film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10679049/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al 2 O 3 , and HfO 2 ). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO 2 . This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO 2 film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.
带氧化物封盖层的 CoFeB 多层薄膜的磁性和介电特性
带有氧化物覆盖层的铁磁多层薄膜在电压控制磁性器件中具有潜在的应用价值。在此,我们介绍了对具有不同覆盖层(Ta、Al2O3 和 HfO2)的 CoFeB/MgO 薄膜的磁性和介电性质的优化。我们发现,具有氧化物封盖层的样品比具有钽封盖层的样品显示出更高的垂直磁各向异性(PMA)。同时,用 30 nm 的 HfO2 覆层的样品获得了 58 的高介电常数。根据 X 射线衍射分析和电流电压测量,这一高介电常数归因于 HfO2 薄膜中形成了与氧空位相关的电容双层。最后,我们发现实现高 PMA 和介电常数的最佳退火温度介于 250 °C 和 290 °C 之间。我们的研究结果有助于设计高性能材料,以控制新型自旋电子器件的界面磁性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Magnetics Letters
IEEE Magnetics Letters PHYSICS, APPLIED-
CiteScore
2.40
自引率
0.00%
发文量
37
期刊介绍: IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信