A Sub-1-V Capacitively-Biased Voltage Reference With an Auto-Zeroed Buffer and a TC of 18-ppm/°C

IF 4 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-09-04 DOI:10.1109/TCSII.2024.3454348

Heungsik Eum;Kofi A. A. Makinwa;Inhee Lee;Youngcheol Chae

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引用次数: 0

Abstract

This brief presents a capacitively-biased CMOS voltage reference, which can operate from a sub-1V supply while achieving a low temperature coefficient (TC) and a competitive power-supply rejection ratio (PSRR). The reference voltage is generated by a capacitive bias circuit that provides a well-defined proportional-to-absolute-temperature (PTAT) bias current for a

$\Delta $

Vth type reference that consists of two stacked MOSFETs with different threshold voltages. The generated output voltage is sampled by an auto-zeroed (AZ) buffer, which can drive capacitive loads up to 2 nF. Fabricated in a 65 nm CMOS process, the prototype voltage reference occupies 0.058 mm2, including the AZ buffer and an on-chip timing generator. It outputs a reference voltage of 204.1 mV with a minimum supply voltage of 0.7 V. It achieves a TC of 18 ppm/°C from

$- 40~^{\circ }$

C to

$85~^{\circ }$

C and a PSRR of −75 dB at 100 Hz with only

$200~\mu $

V ripple.

查看原文本刊更多论文

具有自动清零缓冲器和 18-ppm/° C TC 的 1 V 以下电容偏压型电压基准

本文介绍了一种电容偏置CMOS基准电压，它可以在低于1v的电源下工作，同时实现低温度系数（TC）和有竞争力的电源抑制比（PSRR）。参考电压由电容偏压电路产生，该电路为$\Delta $ Vth型参考电压提供定义良好的比例-绝对温度（PTAT）偏置电流，该参考电压由两个具有不同阈值电压的堆叠mosfet组成。产生的输出电压由自动归零（AZ）缓冲器采样，该缓冲器可以驱动高达2nf的容性负载。在65纳米CMOS工艺中制造，原型电压基准占地0.058 mm2，包括AZ缓冲器和片上时序发生器。输出参考电压204.1 mV，最小电源电压0.7 V。它实现了从$- 40~^{\circ }$ C到$85~^{\circ }$ C的18 ppm/°C的TC和- 75 dB的PSRR在100 Hz下只有$200~\mu $ V纹波。

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.