{"title":"Annealing Time Dependence on Creation of SiV, GeV, and SnV in Diamond by Atmospheric Annealing at 1800 °C","authors":"Tomoya Baba, Masatomi Iizawa, Kouta Takenaka, Kosuke Kimura, Airi Kawasaki, Takashi Taniguchi, Masashi Miyakawa, Hiroyuki Okazaki, Osamu Hanaizumi, Shinobu Onoda","doi":"10.1002/pssa.202400303","DOIUrl":null,"url":null,"abstract":"The creation of SiV<jats:sup>−</jats:sup>, GeV<jats:sup>−</jats:sup>, and SnV<jats:sup>−</jats:sup> are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"135 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400303","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The creation of SiV−, GeV−, and SnV− are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.