Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2024-09-13 DOI:10.1021/acsaelm.4c01309

Rui Su, Yuheng Deng, Weichao Jiang, Yufeng Duan, Runqing Zhang, Ruizi Xiao, Chenglin Shen, Mingxing Gong, Weiming Cheng, Jingping Xu, Peter To Lai, Xiangshui Miao

引用次数: 0

Abstract

This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO_x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition.

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利用拓扑相变材料验证范德瓦尔斯界面以增强薄膜晶体管的电阻开关性能

本研究探讨了接触界面对使用 SrFeOx（SFO）作为氧化层的金属/氧化物/金属忆阻器的影响。制备金顶电极采用了两种方法：电子束蒸发和转移工艺。研究发现，转移工艺可以消除金原子在蒸发过程中造成的表面损伤，从而减少金/SFO 界面的氧离子迁移。因此，忆阻器的导通/关断电流比从 25 提高到 4000，电阻分散度从 32.4% 降低到 3.8%。忆阻器还在 CIFAR-10 图像识别的 VGG16 网络中实现了 91.5% 的准确率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

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