Paulo E Ibañez-Almaguer, Germán Rojas-Lorenzo, Maykel Márquez-Mijares, Jesús Rubayo-Soneira, Gennady B Sushko, Andrei V Korol, Andrey V Solov’yov
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引用次数: 0
Abstract
A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a ‘quasi-mosaic’ bent silicon (111) crystal. This interaction of charged particles with a bent crystal gives rise to various phenomena such as channeling, dechanneling, volume reflection, and volume capture. The crystal’s geometry, emittance of the collimated particle beams, as well as their alignment with respect to the crystal, have been taken into account as they are essential for an accurate quantitative description of the processes. The simulations have been performed using a specialized relativistic molecular dynamics module implemented in the MBN Explorer package. The angular distribution of the particles after traversing the crystal has been calculated for beams of different emittances as well as for different anticlastic curvatures of the bent crystals. For the electron beam, the angular distributions of the deflected particles and the spectrum of radiation obtained in the simulations are compared with the experimental data collected at the Mainz Microtron facility. For the positron beam such calculations have been performed for the first time. We predict significant differences in the angular distributions and the radiation spectra for positrons versus electrons.
期刊介绍:
Published twice-monthly (24 issues per year), Journal of Physics B: Atomic, Molecular and Optical Physics covers the study of atoms, ions, molecules and clusters, and their structure and interactions with particles, photons or fields. The journal also publishes articles dealing with those aspects of spectroscopy, quantum optics and non-linear optics, laser physics, astrophysics, plasma physics, chemical physics, optical cooling and trapping and other investigations where the objects of study are the elementary atomic, ionic or molecular properties of processes.