DM-PA-CNTFET Biosensor for Breast Cancer Detection: Analytical Model

IF 1.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Bhargavi Sharma, Shivani Yadav, Sonam Rewari, Yasha Hasija
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引用次数: 0

Abstract

In this paper, an analytical model for a novel design dielectric modulated plasma-assisted carbon nanotube field-effect transistor (DM-PA-CNTFET) biosensor is proposed for breast cancer detection. This work is based on a PA-CNTFET in which CNT is used as a channel of FET, and various other device engineering techniques such as dual metal gate-all-around structure and dielectric stack of SiO2 and HfO2 have been used. A comparative analysis of DS-GAAE-CNTFET was performed using a silicon gate all-around FET (Silicon-GAA-FET)-based biosensor. Early detection of breast cancer is made possible by immobilizing MDA-MB-231 and HS578t into the dual-sided nanocavity, which alters the electrical properties of the proposed CNTFET-based biosensor. The DS-GAAE-CNTFET sensor demonstrates a drain ON current sensitivity of 236.9 nA and a threshold voltage sensitivity of 285.58 mV for HS578t cancer cells. Malignant MDA-MB-231 breast cells exhibit a higher drain ON current sensitivity of 343.35 nA and a corresponding threshold voltage sensitivity of 293.23 mV. The exceptional sensitivity and structural resilience of the DS-GAAE-CNTFET biosensor establish it as a promising candidate for early breast cancer detection.
用于乳腺癌检测的 DM-PA-CNTFET 生物传感器:分析模型
本文提出了一种用于乳腺癌检测的新型设计介电调制等离子体辅助碳纳米管场效应晶体管(DM-PA-CNTFET)生物传感器的分析模型。这项工作以 PA-CNTFET 为基础,将碳纳米管用作场效应晶体管的沟道,并采用了各种其他器件工程技术,如双金属栅极环绕结构以及 SiO2 和 HfO2 的介电堆叠。利用基于硅栅全能场效应晶体管(Silicon-GAA-FET)的生物传感器对 DS-GAAE-CNTFET 进行了比较分析。通过将 MDA-MB-231 和 HS578t 固定在双面纳米腔中,改变了拟议的基于 CNTFET 的生物传感器的电特性,从而实现了乳腺癌的早期检测。DS-GAAE-CNTFET 传感器对 HS578t 癌细胞的漏极导通电流灵敏度为 236.9 nA,阈值电压灵敏度为 285.58 mV。恶性 MDA-MB-231 乳腺癌细胞的漏极导通电流灵敏度更高,为 343.35 nA,相应的阈值电压灵敏度为 293.23 mV。DS-GAAE-CNTFET 生物传感器卓越的灵敏度和结构弹性使其成为早期乳腺癌检测的理想候选器件。
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来源期刊
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
4.50
自引率
13.60%
发文量
455
期刊介绍: The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.
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