{"title":"Bismuth Ordering and Optical Anisotropy in GaAsBi Alloys","authors":"Ilaria Tomei, Tadas Paulauskas, Vaidas Pačebutas, Sandra Stanionyte, Filippo Pierucci, Beatrice Bonanni, Anna Sgarlata, Massimo Fanfoni, Claudio Goletti","doi":"10.1002/pssb.202400352","DOIUrl":null,"url":null,"abstract":"Reflectance anisotropy spectroscopy (RAS) is applied to investigate GaAsBi samples grown by molecular beam epitaxy on (001)‐oriented GaAs substrates with GaAs or InGaAs buffer layers, resulting in nearly lattice‐matched or compressive strain conditions, with Bi concentration in the alloy in the range 2–5%. These new samples allow to bridge the gap in the Bi concentration values of previous RAS experiments (C. Goletti et al., <jats:italic>Appl. Phys. Lett.</jats:italic> 2022, <jats:italic>120</jats:italic>, 031902), confirming the [110]‐polarized Bi‐related anisotropy in optical spectra below 3 eV and the linear dependence of its amplitude on Bi concentration. The characterization of the grown GaAsBi samples by X‐Ray diffraction and transmission electron microscopy clearly demonstrates the presence of CuPt‐like ordering in the bulk. CuPt structure is the primary origin of the optical anisotropy measured by RAS and by polarized photoluminescence, due to the anisotropic strain produced in the bulk crystal lattice. The lineshape of the RAS spectra above 3 eV, with its overall and characteristic positive convexity, confirms this conclusion.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssb.202400352","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Reflectance anisotropy spectroscopy (RAS) is applied to investigate GaAsBi samples grown by molecular beam epitaxy on (001)‐oriented GaAs substrates with GaAs or InGaAs buffer layers, resulting in nearly lattice‐matched or compressive strain conditions, with Bi concentration in the alloy in the range 2–5%. These new samples allow to bridge the gap in the Bi concentration values of previous RAS experiments (C. Goletti et al., Appl. Phys. Lett. 2022, 120, 031902), confirming the [110]‐polarized Bi‐related anisotropy in optical spectra below 3 eV and the linear dependence of its amplitude on Bi concentration. The characterization of the grown GaAsBi samples by X‐Ray diffraction and transmission electron microscopy clearly demonstrates the presence of CuPt‐like ordering in the bulk. CuPt structure is the primary origin of the optical anisotropy measured by RAS and by polarized photoluminescence, due to the anisotropic strain produced in the bulk crystal lattice. The lineshape of the RAS spectra above 3 eV, with its overall and characteristic positive convexity, confirms this conclusion.
期刊介绍:
physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.