A 180–194-GHz Power Amplifier Co-Designed With a Power-Combining End-Fed Slot Antenna Array in 65-nm CMOS

IF 4.1 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-08-23 DOI:10.1109/TMTT.2024.3441942

Zhicheng Lin;Kaizhe Guo;Hao Guo;Kam Man Shum;Ka Fai Chan;Chi Hou Chan

{"title":"A 180–194-GHz Power Amplifier Co-Designed With a Power-Combining End-Fed Slot Antenna Array in 65-nm CMOS","authors":"Zhicheng Lin;Kaizhe Guo;Hao Guo;Kam Man Shum;Ka Fai Chan;Chi Hou Chan","doi":"10.1109/TMTT.2024.3441942","DOIUrl":null,"url":null,"abstract":"This article presents a <inline-formula> <tex-math>$180\\mathit - 194$ </tex-math></inline-formula>-GHz eight-way (four-way differential) power amplifier co-designed with a power-combining antenna array in a 65-nm CMOS technology. The power-combining antenna array consists of four closely placed end-fed slot antennas, providing a low input impedance, a high radiation efficiency, and a compact layout. The proposed power-combining scheme can increase the output power of a power amplifier without causing the increment of the loss of the amplifier output matching/combining network, which is not possible for a conventional on-chip power combiner with a path number larger than 4 (two-differential). In the measurement, the power amplifier achieves a measured small-signal gain of 21.6 dB, a saturated radiated power of 18.2 dBm, a 1-dB-compression radiated power of 12.6 dBm, and a peak power added efficiency (PAE) of 6.6% at 184 GHz, with the antenna loss included. The measured directivity and saturated effective isotropic radiated power (EIRP) of the chip packaged with a hyperhemispherical silicon lens are 22.7 dBi and 40.9 dBm, respectively, at 184 GHz. The measured 3-dB bandwidth of the power amplifier is 14.1 GHz.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"965-976"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10644122/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This article presents a

$180\mathit - 194$

-GHz eight-way (four-way differential) power amplifier co-designed with a power-combining antenna array in a 65-nm CMOS technology. The power-combining antenna array consists of four closely placed end-fed slot antennas, providing a low input impedance, a high radiation efficiency, and a compact layout. The proposed power-combining scheme can increase the output power of a power amplifier without causing the increment of the loss of the amplifier output matching/combining network, which is not possible for a conventional on-chip power combiner with a path number larger than 4 (two-differential). In the measurement, the power amplifier achieves a measured small-signal gain of 21.6 dB, a saturated radiated power of 18.2 dBm, a 1-dB-compression radiated power of 12.6 dBm, and a peak power added efficiency (PAE) of 6.6% at 184 GHz, with the antenna loss included. The measured directivity and saturated effective isotropic radiated power (EIRP) of the chip packaged with a hyperhemispherical silicon lens are 22.7 dBi and 40.9 dBm, respectively, at 184 GHz. The measured 3-dB bandwidth of the power amplifier is 14.1 GHz.

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采用 65-nm CMOS 与功率合并端馈槽天线阵列共同设计的 180-194-GHz 功率放大器

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.