An All NMOS KY-Boost Converter With Double Injection Control for Fast Line and Load Transient Response

IF 5.2 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Yu-Ting Hung;Chieh-Ju Tsai;Ching-Jan Chen;Chan-Hsuan Hsu;Chun-Yu Hsieh
{"title":"An All NMOS KY-Boost Converter With Double Injection Control for Fast Line and Load Transient Response","authors":"Yu-Ting Hung;Chieh-Ju Tsai;Ching-Jan Chen;Chan-Hsuan Hsu;Chun-Yu Hsieh","doi":"10.1109/TCSI.2024.3446884","DOIUrl":null,"url":null,"abstract":"In this paper, a KY-boost converter with double injection control for the mobile devices is presented. The conventional boost converter suffers from several issues, including large output voltage ripples and slow line and load transient responses. A KY-boost converter is a good candidate to overcome the above drawbacks which has buck-like characteristics. A KY boost converter integrated circuit (IC) is proposed in this paper to achieve better line and load transient responses with the smallest chip size compared with the prior arts. A double injection control is proposed in the KY-boost converter to improve line transient response without affecting loop gain and load transient response. Besides, the issues of start-up and larger chip size for KY converter are improved by the all NMOS power stage design with cross-coupled gate driver. The proposed KY-boost converter IC was fabricated with 0.18-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm CMOS process, and the overall chip area is 1.1 mm2 including pads. The measured peak efficiency of this work can achieve 92.95%. When the proposed double injection control is enabled, the output voltage deviation during line transition can be reduced by more than 200% from 80 mV to 36 mV compared with input voltage feedforward control.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"71 11","pages":"5005-5016"},"PeriodicalIF":5.2000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems I: Regular Papers","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10663268/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a KY-boost converter with double injection control for the mobile devices is presented. The conventional boost converter suffers from several issues, including large output voltage ripples and slow line and load transient responses. A KY-boost converter is a good candidate to overcome the above drawbacks which has buck-like characteristics. A KY boost converter integrated circuit (IC) is proposed in this paper to achieve better line and load transient responses with the smallest chip size compared with the prior arts. A double injection control is proposed in the KY-boost converter to improve line transient response without affecting loop gain and load transient response. Besides, the issues of start-up and larger chip size for KY converter are improved by the all NMOS power stage design with cross-coupled gate driver. The proposed KY-boost converter IC was fabricated with 0.18- $\mu $ m CMOS process, and the overall chip area is 1.1 mm2 including pads. The measured peak efficiency of this work can achieve 92.95%. When the proposed double injection control is enabled, the output voltage deviation during line transition can be reduced by more than 200% from 80 mV to 36 mV compared with input voltage feedforward control.
具有双注入控制功能的全 NMOS KY 升压转换器,可实现快速线路和负载瞬态响应
本文介绍了一种采用双注入控制的 KY 升压转换器,适用于移动设备。传统的升压转换器存在几个问题,包括输出电压纹波大、线路和负载瞬态响应慢。KY 升压转换器具有降压特性,是克服上述缺点的理想选择。本文提出了一种 KY 升压转换器集成电路 (IC),与现有技术相比,它能以最小的芯片尺寸实现更好的线路和负载瞬态响应。在 KY 升压转换器中提出了双注入控制,以在不影响环路增益和负载瞬态响应的情况下改善线路瞬态响应。此外,通过采用交叉耦合栅极驱动器的全 NMOS 功率级设计,KY 转换器的启动和较大芯片尺寸问题也得到了改善。所提出的 KY 升压转换器集成电路采用 0.18 英寸 CMOS 工艺制造,包括焊盘在内的整体芯片面积为 1.1 平方毫米。实测峰值效率可达 92.95%。与输入电压前馈控制相比,当启用所提出的双注入控制时,线路转换期间的输出电压偏差可从 80 mV 降至 36 mV,降幅超过 200%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Circuits and Systems I: Regular Papers
IEEE Transactions on Circuits and Systems I: Regular Papers 工程技术-工程:电子与电气
CiteScore
9.80
自引率
11.80%
发文量
441
审稿时长
2 months
期刊介绍: TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.
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