A. T. Akobirova, V. I. Golovchuk, M. G. Lukashevich, A. V. Mudryi, N. S. Sultonov, V. D. Zhivulko
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引用次数: 0
Abstract
The transmittance, reflectivity, and photoluminescence in the range 0.8–1.7 eV at 300 K and 77 K in the spectral range 0.6–6.0 eV at 300 K of thin films of CdTe synthesized on different substrates by thermal evaporation in a quasi-closed volume were studied. A strong dependence of the intensity and position of the band–band and excitonic luminescence bands on the substrate quality was discovered. The excitonic luminescence bands of films on silicon and glass were shifted by 10 meV to the short-wavelength region because of internal stresses in the films owing to the mismatch between the unit-cell parameters of the substrate and film. The transparency region of films cleaved from glass shifted to the longwavelength region because of the density tails of electronic states in the band gap caused by disordering of the films and the longer wavelength of the light than the roughness of the films on the growth and nucleation side. The best structural perfection was characteristic of films on a CdTe substrate based on the obtained dependences of the intensity and spectral position of the photoluminescence lines.
研究了在准闭合体积中通过热蒸发法在不同基底上合成的碲化镉薄膜在 300 K 时 0.8-1.7 eV 和 77 K 时 0.6-6.0 eV 光谱范围内的透射率、反射率和光致发光。研究发现,带状发光带和激子发光带的强度和位置与基底质量有很大关系。硅和玻璃上薄膜的激子发光带向短波长区域偏移了 10 meV,这是因为基底和薄膜的单元参数不匹配导致薄膜中存在内应力。从玻璃劈开的薄膜的透明度区域偏移到了长波长区域,这是因为薄膜的无序化导致了带隙中电子态的密度尾迹,而且光的波长比生长和成核侧的薄膜粗糙度要长。根据所获得的光致发光线强度和光谱位置的相关性,碲化镉衬底上的薄膜具有最佳的结构完美性。
期刊介绍:
Journal of Applied Spectroscopy reports on many key applications of spectroscopy in chemistry, physics, metallurgy, and biology. An increasing number of papers focus on the theory of lasers, as well as the tremendous potential for the practical applications of lasers in numerous fields and industries.