{"title":"Enhanced Photovoltaic Performance of Heavy-Metal-Free AgInS2 Quantum Dot-Sensitized Solar Cells Using a Facile SILAR Method","authors":"Siti Utari Rahayu, Yu-Rou Wang, Ming-Way Lee","doi":"10.1007/s11664-024-11365-6","DOIUrl":null,"url":null,"abstract":"<p>This study investigates the synthesis of heavy-metal-free AgInS<sub>2</sub> quantum dots (QDs) using a facile successive ionic layer adsorption and reaction (SILAR) method, exploring their application in quantum dot-sensitized solar cells (QDSSCs). The AgInS<sub>2</sub> QDs were grown on mesoporous TiO<sub>2</sub> via a two-stage SILAR process at room temperature. The optimization of Ag-S SILAR cycles (<i>n</i>) was performed to determine the ideal conditions, while the In-S SILAR cycles were held constant at seven cycles. X-ray diffraction (XRD) pattern analysis revealed an orthorhombic crystalline structure of the synthesized AgInS<sub>2</sub> QDs. Analysis of the optical spectra revealed a reduction in the optical energy bandgap (<i>E</i><sub><i>g,op</i></sub>) of AgInS<sub>2</sub> QDs from 2.00 eV to 1.92 eV and further to 1.78 eV as the value of <i>n</i> increased from 1 to 3. Employing AgInS<sub>2</sub> QDs, a polysulfide electrolyte, and a CuS counter electrode, liquid-junction semiconductor QDSSCs were fabricated. Optimal conditions were achieved at <i>n</i> = 2, resulting in outstanding power conversion efficiency (PCE) of 3.57% (<i>J</i><sub>sc</sub> = 8.56 mA/cm<sup>2</sup>, <i>V</i><sub>oc</sub> = 0.64 V, FF = 65.2%). Under reduced light intensity (0.25 sun), the PCE increased to 5.26%. The external quantum efficiency (EQE) spectrum of the best cells spanned 400−700 nm, maintaining a nearly constant EQE value of ~ 65% within the 400−600 nm range. Remarkably, the PCE achieved surpassed previously reported liquid-junction AgInS<sub>2</sub> QDSSCs. These findings highlight the facile production of heavy-metal-free AgInS<sub>2</sub> QDs through a room-temperature SILAR method and the tunable optical properties of AgInS<sub>2</sub> QDs by controlling Ag-S SILAR cycles, revealing their potential as an efficient solar absorber.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\n","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11365-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the synthesis of heavy-metal-free AgInS2 quantum dots (QDs) using a facile successive ionic layer adsorption and reaction (SILAR) method, exploring their application in quantum dot-sensitized solar cells (QDSSCs). The AgInS2 QDs were grown on mesoporous TiO2 via a two-stage SILAR process at room temperature. The optimization of Ag-S SILAR cycles (n) was performed to determine the ideal conditions, while the In-S SILAR cycles were held constant at seven cycles. X-ray diffraction (XRD) pattern analysis revealed an orthorhombic crystalline structure of the synthesized AgInS2 QDs. Analysis of the optical spectra revealed a reduction in the optical energy bandgap (Eg,op) of AgInS2 QDs from 2.00 eV to 1.92 eV and further to 1.78 eV as the value of n increased from 1 to 3. Employing AgInS2 QDs, a polysulfide electrolyte, and a CuS counter electrode, liquid-junction semiconductor QDSSCs were fabricated. Optimal conditions were achieved at n = 2, resulting in outstanding power conversion efficiency (PCE) of 3.57% (Jsc = 8.56 mA/cm2, Voc = 0.64 V, FF = 65.2%). Under reduced light intensity (0.25 sun), the PCE increased to 5.26%. The external quantum efficiency (EQE) spectrum of the best cells spanned 400−700 nm, maintaining a nearly constant EQE value of ~ 65% within the 400−600 nm range. Remarkably, the PCE achieved surpassed previously reported liquid-junction AgInS2 QDSSCs. These findings highlight the facile production of heavy-metal-free AgInS2 QDs through a room-temperature SILAR method and the tunable optical properties of AgInS2 QDs by controlling Ag-S SILAR cycles, revealing their potential as an efficient solar absorber.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.