Voltage Sweep Direction-Dependent Memory Characteristics in an Organic Film

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-09-03 DOI:10.1007/s11664-024-11393-2

Nilima Biswas, Shyam Kumar Bhattacharjee, Syed Arshad Hussain, Pabitra Kumar Paul, Debajyoti Bhattacharjee

{"title":"Voltage Sweep Direction-Dependent Memory Characteristics in an Organic Film","authors":"Nilima Biswas, Shyam Kumar Bhattacharjee, Syed Arshad Hussain, Pabitra Kumar Paul, Debajyoti Bhattacharjee","doi":"10.1007/s11664-024-11393-2","DOIUrl":null,"url":null,"abstract":"<p>The present work reports the findings of “write once read many” (WORM) characteristics in the thin film of an organic dye, Thiazole Yellow G (TYG), when a positive voltage sweep was applied. For a negative voltage sweep, purely ohmic characteristics were observed. During the positive voltage sweep, electron transport took place, and in the negative sweep, hole transport was observed. These voltage sweep-dependent memory characteristics are explained using density functional theory (DFT) calculations for the dye’s highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy level diagram and other theoretical models. High-temperature studies of the device also supported our explanations. Additionally, the device exhibited impressive data retention time of more than 16 h, a large memory window of the order of 10<sup>3</sup>, a high success rate in device fabrication (yield), and 2000 write/read cycles (endurance). Overall, this device shows promising features due to its distinct charge transport behaviour depending on the voltage sweep direction, making it a potential candidate for future efficient resistive memory applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11393-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The present work reports the findings of “write once read many” (WORM) characteristics in the thin film of an organic dye, Thiazole Yellow G (TYG), when a positive voltage sweep was applied. For a negative voltage sweep, purely ohmic characteristics were observed. During the positive voltage sweep, electron transport took place, and in the negative sweep, hole transport was observed. These voltage sweep-dependent memory characteristics are explained using density functional theory (DFT) calculations for the dye’s highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy level diagram and other theoretical models. High-temperature studies of the device also supported our explanations. Additionally, the device exhibited impressive data retention time of more than 16 h, a large memory window of the order of 10³, a high success rate in device fabrication (yield), and 2000 write/read cycles (endurance). Overall, this device shows promising features due to its distinct charge transport behaviour depending on the voltage sweep direction, making it a potential candidate for future efficient resistive memory applications.

Abstract Image

查看原文本刊更多论文

有机薄膜中与电压扫描方向有关的记忆特性

本研究报告了有机染料噻唑黄 G（TYG）薄膜在正电压扫描时的 "一写多读"（WORM）特性。在负电压扫描时，观察到的是纯欧姆特性。在正电压扫描期间，发生了电子传输，而在负电压扫描期间，观察到了空穴传输。利用密度泛函理论（DFT）计算染料的最高占位分子轨道（HOMO）和最低未占位分子轨道（LUMO）能级图以及其他理论模型，可以解释这些依赖于电压扫描的记忆特性。器件的高温研究也支持我们的解释。此外，该器件的数据保留时间超过 16 小时，内存窗口大，达到 103 数量级，器件制造成功率高（良率），写入/读取循环次数达 2000 次（耐久性），这些都令人印象深刻。总之，该器件的电荷传输行为因电压扫描方向的不同而截然不同，因此显示出良好的特性，是未来高效电阻式存储器应用的潜在候选器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.