Selectable growth and electronic structures of two-dimensional layered InSe and In2Se3 films

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-11 DOI:10.1063/5.0221773

Xianxian Xu, Qinghao Meng, Qichao Tian, Junyu Zong, Kaili Wang, Yi Zhang

{"title":"Selectable growth and electronic structures of two-dimensional layered InSe and In2Se3 films","authors":"Xianxian Xu, Qinghao Meng, Qichao Tian, Junyu Zong, Kaili Wang, Yi Zhang","doi":"10.1063/5.0221773","DOIUrl":null,"url":null,"abstract":"InSe, as a representative two-dimensional (2D) semiconductor of the III–VI group, possesses numerous advantages and is widely used in 2D electronic and optoelectronic devices. In2Se3, known for its 2D ferroelectricity and high photoelectric response rates, has recently gained widespread attention. Therefore, realizing selectable growth of these two structural phases and studying their electronic structures is important. In this paper, we realized the molecular beam epitaxial growth of InSe and In2Se3 films on bilayer graphene substrates with precisely controlled stoichiometric phases and thickness. Combining the in situ reflection high-energy electron diffraction, scanning tunneling microscopic, and angle-resolved photoemission spectroscopic measurements, we investigated the distinctions in lattice and electronic structures between InSe and In2Se3 films. The InSe film exhibits a hexagonal lattice structure, whereas the In2Se3 film shows a one-dimensional distorted reconstruction. A key finding is that the top valence bands of InSe films display a varying number of splitting branches at the Γ point, which corresponds to the number of layers. In contrast, no splitting of the top valence bands was observed in the In2Se3 films, highlighting a distinct difference in their electronic structure compared to InSe films.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0221773","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

InSe, as a representative two-dimensional (2D) semiconductor of the III–VI group, possesses numerous advantages and is widely used in 2D electronic and optoelectronic devices. In2Se3, known for its 2D ferroelectricity and high photoelectric response rates, has recently gained widespread attention. Therefore, realizing selectable growth of these two structural phases and studying their electronic structures is important. In this paper, we realized the molecular beam epitaxial growth of InSe and In2Se3 films on bilayer graphene substrates with precisely controlled stoichiometric phases and thickness. Combining the in situ reflection high-energy electron diffraction, scanning tunneling microscopic, and angle-resolved photoemission spectroscopic measurements, we investigated the distinctions in lattice and electronic structures between InSe and In2Se3 films. The InSe film exhibits a hexagonal lattice structure, whereas the In2Se3 film shows a one-dimensional distorted reconstruction. A key finding is that the top valence bands of InSe films display a varying number of splitting branches at the Γ point, which corresponds to the number of layers. In contrast, no splitting of the top valence bands was observed in the In2Se3 films, highlighting a distinct difference in their electronic structure compared to InSe films.

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二维层状 InSe 和 In2Se3 薄膜的可选择生长和电子结构

铟硒是 III-VI 族中具有代表性的二维（2D）半导体，具有众多优点，被广泛应用于二维电子和光电设备中。In2Se3 因其二维铁电性和高光电响应速度而闻名，最近也受到了广泛关注。因此，实现这两种结构相的可选择性生长并研究它们的电子结构非常重要。在本文中，我们在双层石墨烯基底上实现了 InSe 和 In2Se3 薄膜的分子束外延生长，并精确控制了其化学计量相和厚度。结合原位反射高能电子衍射、扫描隧道显微镜和角度分辨光发射光谱测量，我们研究了 InSe 和 In2Se3 薄膜在晶格和电子结构上的差异。InSe 薄膜呈现六边形晶格结构，而 In2Se3 薄膜则呈现一维扭曲重构结构。一个重要发现是铟硒薄膜的顶价带在Γ点处显示出不同数量的分裂分支，这与层数相对应。与此相反，在 In2Se3 薄膜中没有观察到顶部价带分裂的现象，这凸显了其电子结构与 InSe 薄膜的明显不同。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.