{"title":"Gallium nitride-based resonant tunneling diode oscillators","authors":"Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa","doi":"10.1063/5.0225312","DOIUrl":null,"url":null,"abstract":"We demonstrated GaN-based resonant tunneling diode (RTD) oscillators employing monolithic microwave integrated circuits. The GaN-based RTDs with a GaN quantum well and AlN double barriers were grown on freestanding c-plane semi-insulating GaN substrates using metal–organic chemical vapor deposition. The circuit components, including an RTD, a coplanar waveguide, a metal–insulator–metal capacitor, and shunt resistors, were monolithically fabricated on the GaN substrate. The circuits oscillated at a fundamental frequency of 17 GHz, which closely matched an estimated frequency using a three-dimensional electromagnetic simulator and a circuit simulator. This study contributes to the advancement of semiconductor high-frequency devices for millimeter wave and terahertz applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0225312","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrated GaN-based resonant tunneling diode (RTD) oscillators employing monolithic microwave integrated circuits. The GaN-based RTDs with a GaN quantum well and AlN double barriers were grown on freestanding c-plane semi-insulating GaN substrates using metal–organic chemical vapor deposition. The circuit components, including an RTD, a coplanar waveguide, a metal–insulator–metal capacitor, and shunt resistors, were monolithically fabricated on the GaN substrate. The circuits oscillated at a fundamental frequency of 17 GHz, which closely matched an estimated frequency using a three-dimensional electromagnetic simulator and a circuit simulator. This study contributes to the advancement of semiconductor high-frequency devices for millimeter wave and terahertz applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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