Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-10 DOI:10.1063/5.0217334

Xiaoyan Guo, Xiaolin Zhang, Yu Zhu, Yuheng Liu, Xiufeng Han, Yu Yan

{"title":"Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure","authors":"Xiaoyan Guo, Xiaolin Zhang, Yu Zhu, Yuheng Liu, Xiufeng Han, Yu Yan","doi":"10.1063/5.0217334","DOIUrl":null,"url":null,"abstract":"The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0217334","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.

查看原文本刊更多论文

有效控制具有两个磁性原子层的单层 WV2N4 及其范德华异质结构的磁性和传输特性

对于由 vdW 本征磁体组成的范德华（vdW）异质结构，通过电控磁态产生的大磁阻（MR）效应对于低耗散自旋电子器件具有重要意义。我们的第一性原理计算显示，所提出的单层 WV2N4 是一种具有两个磁性 V 原子层的铁磁性（FM）金属，两个 V 原子层之间的层间磁耦合可以通过施加微小的压缩应变从 FM 耦合切换到反铁磁耦合。有趣的是，在所提出的石墨/单层 WV2N4/ 石墨 vdW 异质结构中，使用-1.5%的压缩应变就能实现 253% 的大磁共振比。将单层 WV2N4 和石墨/单层 WV2N4/石墨 vdW 异质结构的应变诱导磁性变化与压电材料的反压电性相结合、提出了一种可行的策略，利用压电材料的反压电性实现对压电材料箝位的石墨/单层 WV2N4/ 石墨 vdW 异质结构中单层 WV2N4 层间磁耦合的电控制，从而在压电材料箝位的石墨/单层 WV2N4/ 石墨 vdW 异质结构中产生较大的磁共振比。我们的工作为开发高能效自旋电子器件提供了一条前景广阔的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.