Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-10 DOI:10.1063/5.0215886

Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang

{"title":"Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy","authors":"Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang","doi":"10.1063/5.0215886","DOIUrl":null,"url":null,"abstract":"The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0215886","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications.

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通过等离子体辅助分子束外延技术生长的单层级氮化铝/氮化镓数字合金

目前，基于氮化铝的深紫外发光器件的效率仍然很低。这些困难主要源于氮化铝的基本材料特性。这项研究采用了单层尺度的 (AlN)m/(GaN)n 有序数字合金 (DA) 作为氮化铝随机合金的替代品，m 和 n 是单层的数量。X 射线衍射扫描显示了清晰的卫星峰，验证了通过分子束外延（MBE）生长的 AlN/GaN DAs 具有良好的周期性，透射电子显微镜结果显示了原子级的锐利光滑界面和相当精确的 m:n 值，与设计完全吻合。具有高当量铝成分的硅掺杂 (AlN)m/(GaN)n DA 的电子密度明显高于在相同分子束外延系统中生长的传统 AlGaN:Si 无规合金。DAs中的硅掺杂电离能仅为2-5 meV，远低于常规无规合金。具有较薄 AlN 隔层的 DA 的光发射发生了红移，这表明 GaN 井之间存在较强的耦合，从而在垂直方向上形成了迷你带。研究结果表明，(AlN)m/(GaN)n DAs 具有作为电子功能替代品应用于各种器件的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.

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